Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects
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arXiv
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| Autori principali: | , , , , , , , , |
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| Natura: | Preprint |
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2026
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| _version_ | 1866908788795113472 |
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| author | Rehman, A. But, D. B. Sai, P. Dub, M. Prystawko, P. Krajewska, A. Cywinski, G. Knap, W. Rumyantsev, S. |
| author_facet | Rehman, A. But, D. B. Sai, P. Dub, M. Prystawko, P. Krajewska, A. Cywinski, G. Knap, W. Rumyantsev, S. |
| contents | Graphene/AlGaN/GaN heterostructures are proposed to investigate the drag and two-stream instability effects. In this study, graphene grown by chemical vapor deposition was transferred from copper onto the top of the standard AlGaN/GaN wafer, forming a heterostructure with two conducting layers separated by an AlGaN barrier layer. Contacts fabricated to the two-dimensional electron gas and graphene allowed us to study the drag current induced in graphene by passing the drive current through the two-dimensional electron gas. At low temperatures, the graphene drag current exhibited quantum oscillations as a function of the drive voltage. As temperature increases, quantum oscillations disappear, and the magnitude of the drag current increases. Graphene/AlGaN/GaN heterostructures are a promising platform for studying drag and two-stream instability effects, especially if the AlGaN barrier layer thickness can be reduced to a few nanometers. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_18369 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects Rehman, A. But, D. B. Sai, P. Dub, M. Prystawko, P. Krajewska, A. Cywinski, G. Knap, W. Rumyantsev, S. Mesoscale and Nanoscale Physics Applied Physics Graphene/AlGaN/GaN heterostructures are proposed to investigate the drag and two-stream instability effects. In this study, graphene grown by chemical vapor deposition was transferred from copper onto the top of the standard AlGaN/GaN wafer, forming a heterostructure with two conducting layers separated by an AlGaN barrier layer. Contacts fabricated to the two-dimensional electron gas and graphene allowed us to study the drag current induced in graphene by passing the drive current through the two-dimensional electron gas. At low temperatures, the graphene drag current exhibited quantum oscillations as a function of the drive voltage. As temperature increases, quantum oscillations disappear, and the magnitude of the drag current increases. Graphene/AlGaN/GaN heterostructures are a promising platform for studying drag and two-stream instability effects, especially if the AlGaN barrier layer thickness can be reduced to a few nanometers. |
| title | Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2601.18369 |