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Bibliographic Details
Main Author: Chin, Sang-Hyun
Format: Preprint
Published: 2026
Subjects:
Online Access:https://arxiv.org/abs/2601.19067
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author Chin, Sang-Hyun
author_facet Chin, Sang-Hyun
contents Over the past few decades, thin-film optoelectronic devices have shown significant advancements. Light-emitting diodes (LEDs) based on organic materials, polymers, quantum dots, as well as metal halide perovskites have achieved remarkable efficiencies and long lifetimes, making them ideal for applications in full-color displays and solid-state lighting. These devices typically feature a layered structure, with the light-emitting layer positioned between charge transport layers and two electrodes. This perspective reviews recent progress in LEDs utilizing perovskite charge transport layers and suggests potential pathways for further development in this field.
format Preprint
id arxiv_https___arxiv_org_abs_2601_19067
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Light-Emitting Diodes with Micrometer-Thick Perovskite Charge Transport Layers
Chin, Sang-Hyun
Materials Science
Over the past few decades, thin-film optoelectronic devices have shown significant advancements. Light-emitting diodes (LEDs) based on organic materials, polymers, quantum dots, as well as metal halide perovskites have achieved remarkable efficiencies and long lifetimes, making them ideal for applications in full-color displays and solid-state lighting. These devices typically feature a layered structure, with the light-emitting layer positioned between charge transport layers and two electrodes. This perspective reviews recent progress in LEDs utilizing perovskite charge transport layers and suggests potential pathways for further development in this field.
title Light-Emitting Diodes with Micrometer-Thick Perovskite Charge Transport Layers
topic Materials Science
url https://arxiv.org/abs/2601.19067