Nolan, G., Han, E., Nahid, S. M., Carmichael, P., van der Zande, A. M., Schleife, A., & Huang, P. Y. (2026). Atomic and Electronic Structure of Strongly Charged Domain Walls in van der Waals α-In$_2$Se$_3$.
Citazione stile Chigago Style (17a edizione)Nolan, Gillian, Edmund Han, Shahriar Muhammad Nahid, Patrick Carmichael, Arend M. van der Zande, André Schleife, e Pinshane Y. Huang. Atomic and Electronic Structure of Strongly Charged Domain Walls in Van Der Waals α-In$_2$Se$_3$. 2026.
Citatione MLA (9a ed.)Nolan, Gillian, et al. Atomic and Electronic Structure of Strongly Charged Domain Walls in Van Der Waals α-In$_2$Se$_3$. 2026.
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