Symmetry Adapted Analysis of Screw Dislocation: Electronic Structure and Carrier Recombination Mechanisms in GaN

Fuente: arXiv

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Bibliographic Details
Main Authors:	Xie, Yuncheng, Shi, Haozhe, Huang, Menglin, Chu, Weibin, Chen, Shiyou, Gong, Xin-Gao
Format:	Preprint
Published:	2026
Subjects:	Materials Science Computational Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2601.19240