Si-Ga2O3/p-GaN epitaxial heterostructure based self-powered and visible-blind UV photodetectors with fast and electrically tuneable response time

Documenti analoghi

• p-(001)NiO/n-(0001)ZnO Heterostructures based Ultraviolet Photodetectors
  di: Kaur, Amandeep, et al.
  Pubblicazione: (2024)
• p-(001)NiO/n-(0001)ZnO heterostructures grown by pulsed laser deposition technique
  di: Sahu, Bhabani Prasad, et al.
  Pubblicazione: (2024)
• Spontaneous growth of perfectly circular domains of MoS2 monolayers using chemical vapour deposition technique
  di: Patra, Umakanta, et al.
  Pubblicazione: (2026)
• CVD grown bilayer MoS2 based artificial optoelectronic synapses for arithmetic computing and image recognition applications
  di: Patra, Umakanta, et al.
  Pubblicazione: (2026)
• Influence of strain and point defects on the electronic structure and related properties of (111)NiO epitaxial films
  di: Sahu, Bhabani Prasad, et al.
  Pubblicazione: (2024)