Dual-Switch Control of a Layer-Locked Anomalous Valley Hall Effect in a Sliding Ferroelectric Antiferromagnet
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arXiv
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| Format: | Preprint |
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2026
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| _version_ | 1866909015567499264 |
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| author | Shen, Quan Liao, Wenhu Xu, Degao Dong, Jiansheng Tan, Jianing |
| author_facet | Shen, Quan Liao, Wenhu Xu, Degao Dong, Jiansheng Tan, Jianing |
| contents | The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to advancing spinvalleytronics. However, realizing a single material system where these quantum states can be independently and reversibly manipulated by distinct stimuli, a prerequisite for multifunctional devices, has remained elusive. Here, we demonstrate a dual-switch mechanism in bilayer VS2, a room-temperature FE-AFM system, that enables electrical and magnetic control of a layer-locked anomalous valley Hall effect (AVHE). First-principles calculations reveal that interlayer sliding breaks spatial inversion symmetry, inducing a switchable out-of-plane FE polarization that coexists with interlayer AFM. The spin-orbit coupled valley polarization can be reversibly switched either by FE polarization reversal or by a magnetic-field-induced spin-flip transition, confirming the existence of electrically and magnetically addressable valley states. The Berry curvature exhibits both valley-contrasting and layer-locked characteristics, which underpin a switchable Hall response. Notably, electric and magnetic switching are functionally equivalent in modulating valley, layer, and spin indices, revealing strong magnetoelectric coupling. This work establishes a multidegree-of-freedom operational paradigm in 2D multiferroics and opens a viable design pathway toward multi-state memory and spin-valleytronic logic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_19556 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Dual-Switch Control of a Layer-Locked Anomalous Valley Hall Effect in a Sliding Ferroelectric Antiferromagnet Shen, Quan Liao, Wenhu Xu, Degao Dong, Jiansheng Tan, Jianing Mesoscale and Nanoscale Physics Materials Science The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to advancing spinvalleytronics. However, realizing a single material system where these quantum states can be independently and reversibly manipulated by distinct stimuli, a prerequisite for multifunctional devices, has remained elusive. Here, we demonstrate a dual-switch mechanism in bilayer VS2, a room-temperature FE-AFM system, that enables electrical and magnetic control of a layer-locked anomalous valley Hall effect (AVHE). First-principles calculations reveal that interlayer sliding breaks spatial inversion symmetry, inducing a switchable out-of-plane FE polarization that coexists with interlayer AFM. The spin-orbit coupled valley polarization can be reversibly switched either by FE polarization reversal or by a magnetic-field-induced spin-flip transition, confirming the existence of electrically and magnetically addressable valley states. The Berry curvature exhibits both valley-contrasting and layer-locked characteristics, which underpin a switchable Hall response. Notably, electric and magnetic switching are functionally equivalent in modulating valley, layer, and spin indices, revealing strong magnetoelectric coupling. This work establishes a multidegree-of-freedom operational paradigm in 2D multiferroics and opens a viable design pathway toward multi-state memory and spin-valleytronic logic devices. |
| title | Dual-Switch Control of a Layer-Locked Anomalous Valley Hall Effect in a Sliding Ferroelectric Antiferromagnet |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2601.19556 |