Thermo-optic modulator with ultra-high extinction ratio for low-loss silicon nitride integrated photonics
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arXiv
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| Autores principales: | , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866917225488711680 |
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| author | Serkin, Dmitriy Buzaverov, Kirill Baburin, Aleksandr Sergeev, Evgeny Avdeev, Sergey Lotkov, Evgeniy Bukatin, Sergey Stepanov, Ilya Kramarenko, Aleksey Amiraslanov, Ali Ryzhikov, Ilya Rodionov, Ilya |
| author_facet | Serkin, Dmitriy Buzaverov, Kirill Baburin, Aleksandr Sergeev, Evgeny Avdeev, Sergey Lotkov, Evgeniy Bukatin, Sergey Stepanov, Ilya Kramarenko, Aleksey Amiraslanov, Ali Ryzhikov, Ilya Rodionov, Ilya |
| contents | Extremely low-loss silicon nitride integrated circuits is a potential platform for a growing number of frontier applications in quantum technologies, high-performance and analog computing, nonlinear optics, light detection and ranging (LiDAR), and biotechnologies. However, efficient optical modulation with a wide frequency response, high contrast, low power and scalable manufacturing remains one of the key challenges for silicon nitride integrated photonics. Here, we propose an integrated thermo-optic phase shifter with isolation trenches operating in the C-band. The fabricated thermo-optic modulator capable to achieve a $π$-phase shift shift at a power consumption of 65 mW, bandwidth of 12 kHz, and extinction ratio (ER) over 80 dB. Moreover, we systematically demonstrate its compatibility with low-loss silicon nitride photonic integrated circuits with microring resonators exibiting an average quality factor more than $5.9 \times 10^{6}$, which correspond to propagation loss of 0.058 dB/cm. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_19732 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Thermo-optic modulator with ultra-high extinction ratio for low-loss silicon nitride integrated photonics Serkin, Dmitriy Buzaverov, Kirill Baburin, Aleksandr Sergeev, Evgeny Avdeev, Sergey Lotkov, Evgeniy Bukatin, Sergey Stepanov, Ilya Kramarenko, Aleksey Amiraslanov, Ali Ryzhikov, Ilya Rodionov, Ilya Optics Extremely low-loss silicon nitride integrated circuits is a potential platform for a growing number of frontier applications in quantum technologies, high-performance and analog computing, nonlinear optics, light detection and ranging (LiDAR), and biotechnologies. However, efficient optical modulation with a wide frequency response, high contrast, low power and scalable manufacturing remains one of the key challenges for silicon nitride integrated photonics. Here, we propose an integrated thermo-optic phase shifter with isolation trenches operating in the C-band. The fabricated thermo-optic modulator capable to achieve a $π$-phase shift shift at a power consumption of 65 mW, bandwidth of 12 kHz, and extinction ratio (ER) over 80 dB. Moreover, we systematically demonstrate its compatibility with low-loss silicon nitride photonic integrated circuits with microring resonators exibiting an average quality factor more than $5.9 \times 10^{6}$, which correspond to propagation loss of 0.058 dB/cm. |
| title | Thermo-optic modulator with ultra-high extinction ratio for low-loss silicon nitride integrated photonics |
| topic | Optics |
| url | https://arxiv.org/abs/2601.19732 |