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| Main Authors: | , , , |
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| Format: | Preprint |
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2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2601.19869 |
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| _version_ | 1866908792243879936 |
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| author | Melegari, Margherita Skinner, Brian Gutierrez-Lezama, Ignacio Morpurgo, Alberto F. |
| author_facet | Melegari, Margherita Skinner, Brian Gutierrez-Lezama, Ignacio Morpurgo, Alberto F. |
| contents | The band structure of Bernal-stacked bilayer graphene can be tuned using double-gated transistors to apply a perpendicular electric field that generates an interlayer potential energy difference $Δ$. Dielectric breakdown limits the operation of conventional devices to the $Δ\ll t_\perp \simeq 360$ meV regime. We employ double ionic gating to reach fields past $ 1$ V/nm, for which $Δ> t_\perp$. We find that for $Δ\simeq t_\perp$, the evolution of the longitudinal resistance ($R_{xx}$) peak as a function of applied gate voltages undergoes a sharp change in slope, exhibiting a pronounced "knee". Increasing $Δ$ past the "knee" results in an unusual evolution transport properties: the peak in $R_{xx}$ decreases in magnitude, it exhibits a splitting concomitant with multiple sign reversals of the Hall resistance, and hysteresis in the peak position emerges. We explain the observed phenomenology in terms of in-gap bound states, whose energy strongly depends on the perpendicular electric field, and crosses the mid-gap level for sufficiently large $Δ> t_\perp$. The phenomenon causes large changes in the electronic density of in-gap states that profoundly affect the evolution of the chemical potential. Our experimental results and their interpretation reveal unique aspects of the physics of in-gap states in Bernal bilayer graphene and demonstrate that double ionic gating enables investigating the large-$Δ$ regime, which has remained experimentally inaccessible so far. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_19869 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Interband State Transfer in Double-Gated Bilayer Graphene at High Electric Field Melegari, Margherita Skinner, Brian Gutierrez-Lezama, Ignacio Morpurgo, Alberto F. Mesoscale and Nanoscale Physics The band structure of Bernal-stacked bilayer graphene can be tuned using double-gated transistors to apply a perpendicular electric field that generates an interlayer potential energy difference $Δ$. Dielectric breakdown limits the operation of conventional devices to the $Δ\ll t_\perp \simeq 360$ meV regime. We employ double ionic gating to reach fields past $ 1$ V/nm, for which $Δ> t_\perp$. We find that for $Δ\simeq t_\perp$, the evolution of the longitudinal resistance ($R_{xx}$) peak as a function of applied gate voltages undergoes a sharp change in slope, exhibiting a pronounced "knee". Increasing $Δ$ past the "knee" results in an unusual evolution transport properties: the peak in $R_{xx}$ decreases in magnitude, it exhibits a splitting concomitant with multiple sign reversals of the Hall resistance, and hysteresis in the peak position emerges. We explain the observed phenomenology in terms of in-gap bound states, whose energy strongly depends on the perpendicular electric field, and crosses the mid-gap level for sufficiently large $Δ> t_\perp$. The phenomenon causes large changes in the electronic density of in-gap states that profoundly affect the evolution of the chemical potential. Our experimental results and their interpretation reveal unique aspects of the physics of in-gap states in Bernal bilayer graphene and demonstrate that double ionic gating enables investigating the large-$Δ$ regime, which has remained experimentally inaccessible so far. |
| title | Interband State Transfer in Double-Gated Bilayer Graphene at High Electric Field |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2601.19869 |