Tunneling probe-based identification of the sp${}^3$ dangling bond on the H-C(100):$2\times1$ surface

Fuente: arXiv
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Auteurs principaux: Oberg, Lachlan, Sung, Yi-Ying, Weber, Cedric, Doherty, Marcus W., Pakes, Christopher I.
Format: Preprint
Publié: 2026
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author Oberg, Lachlan
Sung, Yi-Ying
Weber, Cedric
Doherty, Marcus W.
Pakes, Christopher I.
author_facet Oberg, Lachlan
Sung, Yi-Ying
Weber, Cedric
Doherty, Marcus W.
Pakes, Christopher I.
contents The sp${}^3$ dangling bond on the diamond surface plays a critical role in the performance and fabrication of diamond quantum technologies. For the former, the magnetic and electric properties of this defect can impede the performance of quantum sensors and computers. For the latter, the chemical properties of the dangling bond are integral to proposed methods for bottom-up fabrication of scalable diamond quantum devices. In pursuit of high performance and scalable diamond quantum technology, tunneling probe-based techniques offers the ability to create and modify the sp${}^3$ dangling bond with atomic-scale precision. However, these capabilities cannot be realised either deterministically or at scale without a means for identifying the sp${}^3$ dangling bond amidst the myriad of other defects on the diamond surface. Consequently, in this work we provide a comprehensive experimental and theoretical framework for STS-based characterisation of the sp${}^3$ defect on the H-terminated (100) diamond surface. This capability provides the foundation for future tunneling probe studies in the modification of dangling bonds.
format Preprint
id arxiv_https___arxiv_org_abs_2601_21154
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Tunneling probe-based identification of the sp${}^3$ dangling bond on the H-C(100):$2\times1$ surface
Oberg, Lachlan
Sung, Yi-Ying
Weber, Cedric
Doherty, Marcus W.
Pakes, Christopher I.
Mesoscale and Nanoscale Physics
The sp${}^3$ dangling bond on the diamond surface plays a critical role in the performance and fabrication of diamond quantum technologies. For the former, the magnetic and electric properties of this defect can impede the performance of quantum sensors and computers. For the latter, the chemical properties of the dangling bond are integral to proposed methods for bottom-up fabrication of scalable diamond quantum devices. In pursuit of high performance and scalable diamond quantum technology, tunneling probe-based techniques offers the ability to create and modify the sp${}^3$ dangling bond with atomic-scale precision. However, these capabilities cannot be realised either deterministically or at scale without a means for identifying the sp${}^3$ dangling bond amidst the myriad of other defects on the diamond surface. Consequently, in this work we provide a comprehensive experimental and theoretical framework for STS-based characterisation of the sp${}^3$ defect on the H-terminated (100) diamond surface. This capability provides the foundation for future tunneling probe studies in the modification of dangling bonds.
title Tunneling probe-based identification of the sp${}^3$ dangling bond on the H-C(100):$2\times1$ surface
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2601.21154