Rapid high-temperature initialisation and readout of spins in silicon with 10 THz photons

Fuente: arXiv
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Autores principales: McConnell, Aidan G., Dessmann, Nils, Adamczyk, Wojciech, Murdin, Benedict N., Amato, Lorenzo, Abrosimov, Nikolay V., Pavlov, Sergey G., Aeppli, Gabriel, Matmon, Guy
Formato: Preprint
Publicado: 2026
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author McConnell, Aidan G.
Dessmann, Nils
Adamczyk, Wojciech
Murdin, Benedict N.
Amato, Lorenzo
Abrosimov, Nikolay V.
Pavlov, Sergey G.
Aeppli, Gabriel
Matmon, Guy
author_facet McConnell, Aidan G.
Dessmann, Nils
Adamczyk, Wojciech
Murdin, Benedict N.
Amato, Lorenzo
Abrosimov, Nikolay V.
Pavlov, Sergey G.
Aeppli, Gabriel
Matmon, Guy
contents Each cycle of a quantum computation requires a quantum state initialisation. For semiconductor-based quantum platforms, initialisation is typically performed via slow microwave processes and usually requires cooling to temperatures where only the lowest quantum level is occupied. In silicon, boron atoms are the most common impurities. They bind holes in orbitals including an effective spin-3/2 ground state as well as excited states analogous to the Rydberg series for hydrogen. Here we show that initialisation temperature demands may be relaxed and speeds increased over a thousand-fold by importing, from atomic physics, the procedure of optical pumping via excited orbital states to preferentially occupy a target ground state spin. Spin relaxation within the orbital ground state of unstrained silicon is too fast to measure for conventional pulsed microwave technology, except at temperatures below 2 K, implying a need not only for fast state preparation but also fast state readout. Circularly polarised ~10 THz photon pulses from a free electron laser meet both needs at temperatures above 3 K: a 9 ps pulse enhances the population of one spin eigenstate for the "1s"-like ground state orbital, and the second interrogates this imbalance in spin population. Using parameters given by our data, we calculate that it should be possible to initialise 99% of spins for boron in strained silicon within 250 ps at 3 K. The speedup of both state preparation and measurement gained for THz rather than microwave photons should be explored for the many other solid state quantum systems hosting THz excitations potentially useful as intermediate states.
format Preprint
id arxiv_https___arxiv_org_abs_2601_21880
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Rapid high-temperature initialisation and readout of spins in silicon with 10 THz photons
McConnell, Aidan G.
Dessmann, Nils
Adamczyk, Wojciech
Murdin, Benedict N.
Amato, Lorenzo
Abrosimov, Nikolay V.
Pavlov, Sergey G.
Aeppli, Gabriel
Matmon, Guy
Quantum Physics
Mesoscale and Nanoscale Physics
Optics
Each cycle of a quantum computation requires a quantum state initialisation. For semiconductor-based quantum platforms, initialisation is typically performed via slow microwave processes and usually requires cooling to temperatures where only the lowest quantum level is occupied. In silicon, boron atoms are the most common impurities. They bind holes in orbitals including an effective spin-3/2 ground state as well as excited states analogous to the Rydberg series for hydrogen. Here we show that initialisation temperature demands may be relaxed and speeds increased over a thousand-fold by importing, from atomic physics, the procedure of optical pumping via excited orbital states to preferentially occupy a target ground state spin. Spin relaxation within the orbital ground state of unstrained silicon is too fast to measure for conventional pulsed microwave technology, except at temperatures below 2 K, implying a need not only for fast state preparation but also fast state readout. Circularly polarised ~10 THz photon pulses from a free electron laser meet both needs at temperatures above 3 K: a 9 ps pulse enhances the population of one spin eigenstate for the "1s"-like ground state orbital, and the second interrogates this imbalance in spin population. Using parameters given by our data, we calculate that it should be possible to initialise 99% of spins for boron in strained silicon within 250 ps at 3 K. The speedup of both state preparation and measurement gained for THz rather than microwave photons should be explored for the many other solid state quantum systems hosting THz excitations potentially useful as intermediate states.
title Rapid high-temperature initialisation and readout of spins in silicon with 10 THz photons
topic Quantum Physics
Mesoscale and Nanoscale Physics
Optics
url https://arxiv.org/abs/2601.21880