Role of quasi-Fermi levels in Si- and Mg-related optical absorption in nitride laser diodes (LDs): material context
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2026
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866917235015024640 |
|---|---|
| author | Sakowski, Konrad Sobczak, Cyprian Strak, Pawel Grzegory, Izabella Czernecki, Robert Piechota, Jacek Kaminska, Agata Krukowski, Stanislaw |
| author_facet | Sakowski, Konrad Sobczak, Cyprian Strak, Pawel Grzegory, Izabella Czernecki, Robert Piechota, Jacek Kaminska, Agata Krukowski, Stanislaw |
| contents | Optical absorption and reabsorption of light emitted from active regions in nitride laser diodes (LDs) have been shown to reduce the light extraction efficiency of these devices. It was proven that the presence of Si and Mg may considerably increase the optical absorption. This effect is much stronger in the high-energy (short-wavelength) range of the spectrum. The absorption increase is directly related to the ionization of the Si donor and Mg acceptor levels, which are controlled by the electron and hole quasi-Fermi levels. It is shown that the absorption may be increased because of the higher ionization of Mg caused by the compensation in the p-type region and the high ionization of Si in the n-type region. It was explained theoretically why optical efficiency is increased by removal of doping in waveguides. It was also shown that good material quality leads to a low absorption level, especially in the Mg-doped p-type part of the device. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2601_22973 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Role of quasi-Fermi levels in Si- and Mg-related optical absorption in nitride laser diodes (LDs): material context Sakowski, Konrad Sobczak, Cyprian Strak, Pawel Grzegory, Izabella Czernecki, Robert Piechota, Jacek Kaminska, Agata Krukowski, Stanislaw Materials Science Optics Optical absorption and reabsorption of light emitted from active regions in nitride laser diodes (LDs) have been shown to reduce the light extraction efficiency of these devices. It was proven that the presence of Si and Mg may considerably increase the optical absorption. This effect is much stronger in the high-energy (short-wavelength) range of the spectrum. The absorption increase is directly related to the ionization of the Si donor and Mg acceptor levels, which are controlled by the electron and hole quasi-Fermi levels. It is shown that the absorption may be increased because of the higher ionization of Mg caused by the compensation in the p-type region and the high ionization of Si in the n-type region. It was explained theoretically why optical efficiency is increased by removal of doping in waveguides. It was also shown that good material quality leads to a low absorption level, especially in the Mg-doped p-type part of the device. |
| title | Role of quasi-Fermi levels in Si- and Mg-related optical absorption in nitride laser diodes (LDs): material context |
| topic | Materials Science Optics |
| url | https://arxiv.org/abs/2601.22973 |