Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure

Fuente: arXiv
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Main Authors: Shan, Hangyong, Waldherr, Max, Diksha, Diksha, Missaoui, Ghada, Atalay, Seyma Esra, Zinner, Martin, Valencia, Ana Maria, Watanabe, Kenji, Taniguchi, Takashi, Tongay, Seth Ariel, Cocchi, Caterina, Mulkerin, Brendan C., Levinsen, Jesper, Marchetti, Francesca Maria, Parish, Meera M., Nilius, Niklas, Schneider, Christian, Höfling, Sven
Format: Preprint
Published: 2026
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author Shan, Hangyong
Waldherr, Max
Diksha, Diksha
Missaoui, Ghada
Atalay, Seyma Esra
Zinner, Martin
Valencia, Ana Maria
Watanabe, Kenji
Taniguchi, Takashi
Tongay, Seth Ariel
Cocchi, Caterina
Mulkerin, Brendan C.
Levinsen, Jesper
Marchetti, Francesca Maria
Parish, Meera M.
Nilius, Niklas
Schneider, Christian
Höfling, Sven
author_facet Shan, Hangyong
Waldherr, Max
Diksha, Diksha
Missaoui, Ghada
Atalay, Seyma Esra
Zinner, Martin
Valencia, Ana Maria
Watanabe, Kenji
Taniguchi, Takashi
Tongay, Seth Ariel
Cocchi, Caterina
Mulkerin, Brendan C.
Levinsen, Jesper
Marchetti, Francesca Maria
Parish, Meera M.
Nilius, Niklas
Schneider, Christian
Höfling, Sven
contents Engineering optical properties, such as luminescence purity and charge transfer, is crucial for harnessing the application potential of atomically thin transition metal dichalcogenides (TMDCs). While electrostatic gating is widely applied to gain charge control in TMDC monolayers, charge transfer can also be engineered via coupling of TMDC monolayers at semiconductor III/V, organic, or van der Waals interfaces. This confers great advantages, such as ease in implementation and compatibility in device integration. Here, we shed light on the optical properties of many-particle complexes emerging at the GaInP/MoSe2 interface as a highly relevant material combination to manipulate the optical properties of TMDCs in integrated photonic devices. Our study verifies its nature as a type II hetero-interface, which bears the feasibility to display disorder-free photoluminescence. Through optical absorption measurements, we verify that the charged complexes acquire substantial oscillator strength. Furthermore, temperature-dependent photoluminescence, supported by a microscopic theory framework, evidences the suppression of the characteristic carrier recoil effect that was previously observed in the photoluminescence of trions in TMDCs. These phenomena allow us to identify the optical signatures at the TMDC-GaInP interface as Fermi polaron quasiparticle resonances, which are of high importance in researching Bose-Fermi mixtures in condensed matter systems.
format Preprint
id arxiv_https___arxiv_org_abs_2602_01964
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
Shan, Hangyong
Waldherr, Max
Diksha, Diksha
Missaoui, Ghada
Atalay, Seyma Esra
Zinner, Martin
Valencia, Ana Maria
Watanabe, Kenji
Taniguchi, Takashi
Tongay, Seth Ariel
Cocchi, Caterina
Mulkerin, Brendan C.
Levinsen, Jesper
Marchetti, Francesca Maria
Parish, Meera M.
Nilius, Niklas
Schneider, Christian
Höfling, Sven
Materials Science
Engineering optical properties, such as luminescence purity and charge transfer, is crucial for harnessing the application potential of atomically thin transition metal dichalcogenides (TMDCs). While electrostatic gating is widely applied to gain charge control in TMDC monolayers, charge transfer can also be engineered via coupling of TMDC monolayers at semiconductor III/V, organic, or van der Waals interfaces. This confers great advantages, such as ease in implementation and compatibility in device integration. Here, we shed light on the optical properties of many-particle complexes emerging at the GaInP/MoSe2 interface as a highly relevant material combination to manipulate the optical properties of TMDCs in integrated photonic devices. Our study verifies its nature as a type II hetero-interface, which bears the feasibility to display disorder-free photoluminescence. Through optical absorption measurements, we verify that the charged complexes acquire substantial oscillator strength. Furthermore, temperature-dependent photoluminescence, supported by a microscopic theory framework, evidences the suppression of the characteristic carrier recoil effect that was previously observed in the photoluminescence of trions in TMDCs. These phenomena allow us to identify the optical signatures at the TMDC-GaInP interface as Fermi polaron quasiparticle resonances, which are of high importance in researching Bose-Fermi mixtures in condensed matter systems.
title Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
topic Materials Science
url https://arxiv.org/abs/2602.01964