Energy-Transfer-Enhanced Emission and Quantum Sensing of VB- Defects in hBN-PbI2 Heterostructures

Fuente: arXiv
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Auteurs principaux: Mayner, Eveline, Zhumagulov, Yaroslav, de Giorgio, Cristian, Chu, Feihong, Swain, Prabhu, Fantner, Georg, Kis, Andras, Yazyev, Oleg, Radenovic, Aleksandra
Format: Preprint
Publié: 2026
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author Mayner, Eveline
Zhumagulov, Yaroslav
de Giorgio, Cristian
Chu, Feihong
Swain, Prabhu
Fantner, Georg
Kis, Andras
Yazyev, Oleg
Radenovic, Aleksandra
author_facet Mayner, Eveline
Zhumagulov, Yaroslav
de Giorgio, Cristian
Chu, Feihong
Swain, Prabhu
Fantner, Georg
Kis, Andras
Yazyev, Oleg
Radenovic, Aleksandra
contents Spin defects in two-dimensional materials hold significant potential for quantum information technologies and sensing applications. The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has attracted considerable attention as a quantum sensor due to its demonstrated sensitivity to temperature, magnetic fields, and pressure.1 However, its applications have thus far been limited by inherently dim photoluminescence (PL). By fabricating a van der Waals heterostructure with a sensitizing donor layer, lead iodide (PbI2), we effectively enhance the PL intensity from the VB- by 5-45x, while maintaining compatibility with other heterostructures and vdW optoelectronic platforms. The type-I band alignment at the heterojunction enables efficient exciton migration while suppressing back-electron transfer, and the strong spectral overlap between the PbI2 emission and defect absorption supports efficient fluorescence resonance energy transfer. Ab initio density functional theory (DFT) predicts a photon-ratcheting mechanism that boosts absorption and emission while maintaining magnetic resonance (ODMR) contrast through minimal hybridization. Experimentally, the heterostructure exhibits enhanced continuous-wave ODMR sensitivity and functions as a precise probe of external magnetic fields. This work establishes a proof-of-concept for amplifying weak defect signals in nanomaterials, highlighting a new strategy for engineering their optical and magnetic responses.
format Preprint
id arxiv_https___arxiv_org_abs_2602_02256
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Energy-Transfer-Enhanced Emission and Quantum Sensing of VB- Defects in hBN-PbI2 Heterostructures
Mayner, Eveline
Zhumagulov, Yaroslav
de Giorgio, Cristian
Chu, Feihong
Swain, Prabhu
Fantner, Georg
Kis, Andras
Yazyev, Oleg
Radenovic, Aleksandra
Materials Science
Optics
Quantum Physics
Spin defects in two-dimensional materials hold significant potential for quantum information technologies and sensing applications. The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has attracted considerable attention as a quantum sensor due to its demonstrated sensitivity to temperature, magnetic fields, and pressure.1 However, its applications have thus far been limited by inherently dim photoluminescence (PL). By fabricating a van der Waals heterostructure with a sensitizing donor layer, lead iodide (PbI2), we effectively enhance the PL intensity from the VB- by 5-45x, while maintaining compatibility with other heterostructures and vdW optoelectronic platforms. The type-I band alignment at the heterojunction enables efficient exciton migration while suppressing back-electron transfer, and the strong spectral overlap between the PbI2 emission and defect absorption supports efficient fluorescence resonance energy transfer. Ab initio density functional theory (DFT) predicts a photon-ratcheting mechanism that boosts absorption and emission while maintaining magnetic resonance (ODMR) contrast through minimal hybridization. Experimentally, the heterostructure exhibits enhanced continuous-wave ODMR sensitivity and functions as a precise probe of external magnetic fields. This work establishes a proof-of-concept for amplifying weak defect signals in nanomaterials, highlighting a new strategy for engineering their optical and magnetic responses.
title Energy-Transfer-Enhanced Emission and Quantum Sensing of VB- Defects in hBN-PbI2 Heterostructures
topic Materials Science
Optics
Quantum Physics
url https://arxiv.org/abs/2602.02256