Saved in:
Bibliographic Details
Main Authors: Gao, Yongyi, Un, Hio-Ieng, Huang, Yuxuan, Sirringhaus, Henning, Jacobs, Ian E.
Format: Preprint
Published: 2026
Subjects:
Online Access:https://arxiv.org/abs/2602.02418
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866912876604686336
author Gao, Yongyi
Un, Hio-Ieng
Huang, Yuxuan
Sirringhaus, Henning
Jacobs, Ian E.
author_facet Gao, Yongyi
Un, Hio-Ieng
Huang, Yuxuan
Sirringhaus, Henning
Jacobs, Ian E.
contents Electrical conductivity is the most fundamental charge transport parameter, and measurements of conductivity are a basic part of materials characterization for nearly all conducting materials. In thin films, conductivity is often measured in four bar architectures in which the current source and voltage measurement are spatially separated to eliminate systematic error due to contact resistance. Despite the apparent simplicity of these measurements, we demonstrate here that the four bar architecture is subject to significant systematic error arising from the finite conductivity of the metal electrodes. Remarkably, these systematic errors can in some cases become unbounded, producing arbitrarily high measured conductivity at modest true film conductivities, within the range relevant to emerging thin film thermoelectric materials such as conducting polymers. These unbounded errors, which can occur even in properly conducted four-point measurements of patterned films, likely explain literature reports of extremely high conductivities in conducting polymers, and can lead to anomalous scaling in temperature dependent studies, potentially leading to incorrect interpretation of the relevant charge transport mechanism. We characterize the device geometric factors that control these errors, which stand partially at odds with those required for accurate Seebeck coefficient measurements. Our analyses allow us to identify device architectures that provide small systematic errors for conductivity and Seebeck coefficient while still providing a low measurement resistance, critical to reducing noise in thermal voltage measurements. These findings provide important guidelines for accurate measurements in the growing field of thin-film thermoelectric materials.
format Preprint
id arxiv_https___arxiv_org_abs_2602_02418
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Unbounded Systematic Error in Thin Film Conductivity Measurements
Gao, Yongyi
Un, Hio-Ieng
Huang, Yuxuan
Sirringhaus, Henning
Jacobs, Ian E.
Materials Science
Soft Condensed Matter
Electrical conductivity is the most fundamental charge transport parameter, and measurements of conductivity are a basic part of materials characterization for nearly all conducting materials. In thin films, conductivity is often measured in four bar architectures in which the current source and voltage measurement are spatially separated to eliminate systematic error due to contact resistance. Despite the apparent simplicity of these measurements, we demonstrate here that the four bar architecture is subject to significant systematic error arising from the finite conductivity of the metal electrodes. Remarkably, these systematic errors can in some cases become unbounded, producing arbitrarily high measured conductivity at modest true film conductivities, within the range relevant to emerging thin film thermoelectric materials such as conducting polymers. These unbounded errors, which can occur even in properly conducted four-point measurements of patterned films, likely explain literature reports of extremely high conductivities in conducting polymers, and can lead to anomalous scaling in temperature dependent studies, potentially leading to incorrect interpretation of the relevant charge transport mechanism. We characterize the device geometric factors that control these errors, which stand partially at odds with those required for accurate Seebeck coefficient measurements. Our analyses allow us to identify device architectures that provide small systematic errors for conductivity and Seebeck coefficient while still providing a low measurement resistance, critical to reducing noise in thermal voltage measurements. These findings provide important guidelines for accurate measurements in the growing field of thin-film thermoelectric materials.
title Unbounded Systematic Error in Thin Film Conductivity Measurements
topic Materials Science
Soft Condensed Matter
url https://arxiv.org/abs/2602.02418