Single crystal growth and properties of Au- and Ge-substituted EuPd$_2$Si$_2$

Fuente: arXiv
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Auteurs principaux: Ocker, Michelle, Möller, Robert, Peters, Marius, Walther, Franziska, Kirschall, Vivien, Hezel, Dominik C., Merz, Michael, Guguschev, Christo, Krellner, Cornelius, Kliemt, Kristin
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Publié: 2026
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author Ocker, Michelle
Möller, Robert
Peters, Marius
Walther, Franziska
Kirschall, Vivien
Hezel, Dominik C.
Merz, Michael
Guguschev, Christo
Krellner, Cornelius
Kliemt, Kristin
author_facet Ocker, Michelle
Möller, Robert
Peters, Marius
Walther, Franziska
Kirschall, Vivien
Hezel, Dominik C.
Merz, Michael
Guguschev, Christo
Krellner, Cornelius
Kliemt, Kristin
contents We report on the single crystal growth of Eu(Pd$_{1-x}$Au$_x$)$_2$Si$_2$, $0< x\leq 0.2$, from a levitating Eu-rich melt using the Czochralski method. Our structural analysis of the samples confirms the ThCr$_2$Si$_2$-type structure as well as an increase of the room temperature $a$ and $c$ lattice parameters with increasing $x$. Chemical analysis reveals that, depending on the Au concentration, only about 25-35\% of the amount of Au available in the initial melt is incorporated into the crystal structure, resulting in a decreasing substitution level for increasing $x$. Through Au substitution, chemical pressure is applied and large changes in valence crossover temperatures are already observed for low substitution levels $x$. In contrast to previous studies, we do not find any signs of a first-order transition in samples with $x_{\rm nom}=0.1$ or AFM order for higher $x$. Furthermore, we observe the formation of quarternary side phases for a higher amount of Au in the melt. In addition, cubic-mm-sized single crystals of EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$ with $x_{\rm nom}=0.2$ were grown. The analysis of the X-ray fluorescence revealed that the crystals exhibit a slight variation in the Ge content. Such tiny compositional changes can cause changes in the sample properties concerning variations of the crossover temperature or changes of the type of the transition from crossover to magnetic order. Furthermore, we report on a new orthorhombic phase EuPd$_{1.42}$Si$_{1.27}$Ge$_{0.31}$ that orders antiferromagnetically below $17\,\rm K$.
format Preprint
id arxiv_https___arxiv_org_abs_2602_03287
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Single crystal growth and properties of Au- and Ge-substituted EuPd$_2$Si$_2$
Ocker, Michelle
Möller, Robert
Peters, Marius
Walther, Franziska
Kirschall, Vivien
Hezel, Dominik C.
Merz, Michael
Guguschev, Christo
Krellner, Cornelius
Kliemt, Kristin
Strongly Correlated Electrons
We report on the single crystal growth of Eu(Pd$_{1-x}$Au$_x$)$_2$Si$_2$, $0< x\leq 0.2$, from a levitating Eu-rich melt using the Czochralski method. Our structural analysis of the samples confirms the ThCr$_2$Si$_2$-type structure as well as an increase of the room temperature $a$ and $c$ lattice parameters with increasing $x$. Chemical analysis reveals that, depending on the Au concentration, only about 25-35\% of the amount of Au available in the initial melt is incorporated into the crystal structure, resulting in a decreasing substitution level for increasing $x$. Through Au substitution, chemical pressure is applied and large changes in valence crossover temperatures are already observed for low substitution levels $x$. In contrast to previous studies, we do not find any signs of a first-order transition in samples with $x_{\rm nom}=0.1$ or AFM order for higher $x$. Furthermore, we observe the formation of quarternary side phases for a higher amount of Au in the melt. In addition, cubic-mm-sized single crystals of EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$ with $x_{\rm nom}=0.2$ were grown. The analysis of the X-ray fluorescence revealed that the crystals exhibit a slight variation in the Ge content. Such tiny compositional changes can cause changes in the sample properties concerning variations of the crossover temperature or changes of the type of the transition from crossover to magnetic order. Furthermore, we report on a new orthorhombic phase EuPd$_{1.42}$Si$_{1.27}$Ge$_{0.31}$ that orders antiferromagnetically below $17\,\rm K$.
title Single crystal growth and properties of Au- and Ge-substituted EuPd$_2$Si$_2$
topic Strongly Correlated Electrons
url https://arxiv.org/abs/2602.03287