Fabrication and Characterization of p-type Inverted Coaxial Point Contact (ICPC) Detectors with a-Ge Dual-Blocking Contacts
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arXiv
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2026
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| _version_ | 1866915771517501440 |
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| author | Panamaldeniya, S. A. Dong, K. M. Mei, D. M. |
| author_facet | Panamaldeniya, S. A. Dong, K. M. Mei, D. M. |
| contents | We report the fabrication and characterization of two p-type inverted coaxial point contact (ICPC) high-purity germanium (HPGe) detectors, SAP16 and SAP17, produced from USD-grown crystals with net impurity concentrations of $\sim 3\times10^{10}\,\mathrm{cm^{-3}}$. Both devices employ \emph{thin} amorphous-germanium (a-Ge) dual-blocking contacts, implemented here for the first time on ICPC detectors, to provide bipolar charge blocking while limiting dead-layer thickness. Electrical tests at 76~K demonstrate stable operation with picoampere-level leakage currents and sub-pF capacitance: SAP17 reached $\sim 4.62$~pA at the maximum tested bias (500~V) and operated stably at 400~V with $C\simeq 0.503$~pF. \emph{Meanwhile,} SAP16 achieved superior spectroscopic performance, with energy resolutions of 2.42\% at 59.5~keV and 0.36\% at 662~keV. Gamma-ray spectroscopy with $^{241}$Am and $^{137}$Cs shows that modest geometric differences lead to measurable changes in depletion behavior and charge-collection uniformity, consistent with electrostatic modeling. Angular-response measurements further reveal pronounced directional sensitivity at 59.5~keV, whereas the 662~keV response is essentially isotropic over the measured range. These results validate thin a-Ge dual-blocking contacts for ICPC HPGe detectors and highlight geometry-driven trade-offs among leakage current, depletion, and energy resolution relevant to low-background and low-threshold applications. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2602_03631 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Fabrication and Characterization of p-type Inverted Coaxial Point Contact (ICPC) Detectors with a-Ge Dual-Blocking Contacts Panamaldeniya, S. A. Dong, K. M. Mei, D. M. Instrumentation and Detectors We report the fabrication and characterization of two p-type inverted coaxial point contact (ICPC) high-purity germanium (HPGe) detectors, SAP16 and SAP17, produced from USD-grown crystals with net impurity concentrations of $\sim 3\times10^{10}\,\mathrm{cm^{-3}}$. Both devices employ \emph{thin} amorphous-germanium (a-Ge) dual-blocking contacts, implemented here for the first time on ICPC detectors, to provide bipolar charge blocking while limiting dead-layer thickness. Electrical tests at 76~K demonstrate stable operation with picoampere-level leakage currents and sub-pF capacitance: SAP17 reached $\sim 4.62$~pA at the maximum tested bias (500~V) and operated stably at 400~V with $C\simeq 0.503$~pF. \emph{Meanwhile,} SAP16 achieved superior spectroscopic performance, with energy resolutions of 2.42\% at 59.5~keV and 0.36\% at 662~keV. Gamma-ray spectroscopy with $^{241}$Am and $^{137}$Cs shows that modest geometric differences lead to measurable changes in depletion behavior and charge-collection uniformity, consistent with electrostatic modeling. Angular-response measurements further reveal pronounced directional sensitivity at 59.5~keV, whereas the 662~keV response is essentially isotropic over the measured range. These results validate thin a-Ge dual-blocking contacts for ICPC HPGe detectors and highlight geometry-driven trade-offs among leakage current, depletion, and energy resolution relevant to low-background and low-threshold applications. |
| title | Fabrication and Characterization of p-type Inverted Coaxial Point Contact (ICPC) Detectors with a-Ge Dual-Blocking Contacts |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2602.03631 |