Electrically and optically active charge carrier traps in silicon-doped few-layer GaSe

Fuente: arXiv

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Bibliographic Details
Main Authors:	Bissolo, M., Li, R., Ogura, M., Sofer, Z., Polesya, S., Han, D., Holleitner, A. W., Kastl, C., Koblmüller, G., Ebert, H., Zallo, E., Finley, J. J.
Format:	Preprint
Published:	2026
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2602.03964