Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866912874967859200 |
|---|---|
| author | Zhou, Chao Huang, Sizhe Si, Yangyang Ren, Zhongqi Zhao, Jianyuan Wang, Hailin Li, Jingxuan Cheng, Xianlong Huang, Haoliang Liu, Shi Das, Sujit Deng, Shiqing Chen, Zuhuang |
| author_facet | Zhou, Chao Huang, Sizhe Si, Yangyang Ren, Zhongqi Zhao, Jianyuan Wang, Hailin Li, Jingxuan Cheng, Xianlong Huang, Haoliang Liu, Shi Das, Sujit Deng, Shiqing Chen, Zuhuang |
| contents | HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down, resistive-switching behavior becomes increasingly pronounced, intricately intertwining with the polarization-switching process and affecting ferroelectric switching factors often overlooked yet crucial for device performance optimization. By characterizing resistive-switching behavior and oxygen vacancy motion using tailored electric pulse schemes, we decouple the resistive-switching behavior from the overall switching process in ultrathin ferroelectric HZO films, which would otherwise erroneously inflate polarization values and increase coercive fields. Building on this, we elucidate endurance degradation mechanisms from dual perspectives of resistive switching and defect migration. Furthermore, we demonstrate the mitigated resistive switching activity by designing HfO2-based devices with symmetric oxide electrodes, achieving reduced coercive fields and improved cycling performances. This work provides crucial insights into the origins of inflated polarizations and reliability challenges in HfO2-based devices while offering a viable strategy to enhance ferroelectric properties for advanced memory applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_04133 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films Zhou, Chao Huang, Sizhe Si, Yangyang Ren, Zhongqi Zhao, Jianyuan Wang, Hailin Li, Jingxuan Cheng, Xianlong Huang, Haoliang Liu, Shi Das, Sujit Deng, Shiqing Chen, Zuhuang Materials Science HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down, resistive-switching behavior becomes increasingly pronounced, intricately intertwining with the polarization-switching process and affecting ferroelectric switching factors often overlooked yet crucial for device performance optimization. By characterizing resistive-switching behavior and oxygen vacancy motion using tailored electric pulse schemes, we decouple the resistive-switching behavior from the overall switching process in ultrathin ferroelectric HZO films, which would otherwise erroneously inflate polarization values and increase coercive fields. Building on this, we elucidate endurance degradation mechanisms from dual perspectives of resistive switching and defect migration. Furthermore, we demonstrate the mitigated resistive switching activity by designing HfO2-based devices with symmetric oxide electrodes, achieving reduced coercive fields and improved cycling performances. This work provides crucial insights into the origins of inflated polarizations and reliability challenges in HfO2-based devices while offering a viable strategy to enhance ferroelectric properties for advanced memory applications. |
| title | Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2602.04133 |