ZnCdO:Eu Epitaxially Grown Alloys for Self-Powered Ultrafast Broadband Photodetection
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
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2026
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| _version_ | 1866911651350970368 |
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| author | Perlikowski, Igor Zielony, Eunika Wierzbicka, Aleksandra Lysak, Anastasiia Jakiela, Rafal Przezdziecka, Ewa |
| author_facet | Perlikowski, Igor Zielony, Eunika Wierzbicka, Aleksandra Lysak, Anastasiia Jakiela, Rafal Przezdziecka, Ewa |
| contents | Photodetectors (PDs) are essential in imaging, communication, and sensing technologies. However, their reliance on external power makes them energy-consuming. This creates a strong need for self-powered PDs as a sustainable alternative. ZnO is a promising semiconductor material due to its pyroelectric properties, stemming from non-centrosymmetric wurtzite crystal structure, enabling the pyro-phototronic effect that enhances response speed. Properties of ZnO can be tailored via alloying and doping. Thus, this work explores thin layers of ZnCdO:Eu random alloys grown by molecular beam epitaxy (MBE) on silicon substrates, with varying Cd content. The study shows that doping with Eu notably affects growth kinetics, promoting strong [0001] orientation preference. Moreover, photoluminescence measurements confirm the successful incorporation of Eu3+ ions into the structure. Electrical measurements show that the introduction of Cd eliminates the problem of Schottky barrier formation on the ZnO/Si interface. The n-ZnCdO:Eu/p-Si junctions exhibit rectifying behavior and generate photocurrent across 380-1150 nm wavelength range without external electrical bias. Utilizing the pyro-phototronic effect, these devices achieved ultrafast response times: rise time below 10 us and decay time below 5 us for 405 nm and 650 nm illumination - placing them among the fastest self-powered oxide-based detectors that do not rely on additional performance-enhancing layers. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_04426 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | ZnCdO:Eu Epitaxially Grown Alloys for Self-Powered Ultrafast Broadband Photodetection Perlikowski, Igor Zielony, Eunika Wierzbicka, Aleksandra Lysak, Anastasiia Jakiela, Rafal Przezdziecka, Ewa Materials Science Applied Physics Photodetectors (PDs) are essential in imaging, communication, and sensing technologies. However, their reliance on external power makes them energy-consuming. This creates a strong need for self-powered PDs as a sustainable alternative. ZnO is a promising semiconductor material due to its pyroelectric properties, stemming from non-centrosymmetric wurtzite crystal structure, enabling the pyro-phototronic effect that enhances response speed. Properties of ZnO can be tailored via alloying and doping. Thus, this work explores thin layers of ZnCdO:Eu random alloys grown by molecular beam epitaxy (MBE) on silicon substrates, with varying Cd content. The study shows that doping with Eu notably affects growth kinetics, promoting strong [0001] orientation preference. Moreover, photoluminescence measurements confirm the successful incorporation of Eu3+ ions into the structure. Electrical measurements show that the introduction of Cd eliminates the problem of Schottky barrier formation on the ZnO/Si interface. The n-ZnCdO:Eu/p-Si junctions exhibit rectifying behavior and generate photocurrent across 380-1150 nm wavelength range without external electrical bias. Utilizing the pyro-phototronic effect, these devices achieved ultrafast response times: rise time below 10 us and decay time below 5 us for 405 nm and 650 nm illumination - placing them among the fastest self-powered oxide-based detectors that do not rely on additional performance-enhancing layers. |
| title | ZnCdO:Eu Epitaxially Grown Alloys for Self-Powered Ultrafast Broadband Photodetection |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2602.04426 |