Saved in:
Bibliographic Details
Main Authors: Regazzoni, Veronica, Rovaris, Fabrizio, Marzegalli, Anna, Montalenti, Francesco, Scalise, Emilio
Format: Preprint
Published: 2026
Subjects:
Online Access:https://arxiv.org/abs/2602.04469
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866915777593999360
author Regazzoni, Veronica
Rovaris, Fabrizio
Marzegalli, Anna
Montalenti, Francesco
Scalise, Emilio
author_facet Regazzoni, Veronica
Rovaris, Fabrizio
Marzegalli, Anna
Montalenti, Francesco
Scalise, Emilio
contents Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic properties induced by 60° dislocations in Ge. Using large-scale DFT calculations, we determine the band structure for both the shuffle and glide sets in their lowest-energy configurations. We also perform charged-defect calculations to aid in the interpretation of complex photoluminescence spectra observed in epitaxial Ge layers. The band structure for the shuffle set reveals defect-induced dispersive bands localized within the band gap near the Γ point, whereas for the glide set, we observe strong overlap with the conduction band. Defect-induced band splitting evident away from Γ reveals Rashba-Dresselhaus spin-orbit coupling, an effect previously reported only for screw dislocations. Remarkably, we find evidence that specific dislocation arrangements can stabilize antiferromagnetic ordering with sizable local magnetic moments and considerable exchange splitting between opposite spin states. These results uncover rich physics in Ge dislocations through the combination of spin-orbit coupling and magnetic ordering, potentially enabling novel defect-based functionalities in Ge devices.
format Preprint
id arxiv_https___arxiv_org_abs_2602_04469
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations
Regazzoni, Veronica
Rovaris, Fabrizio
Marzegalli, Anna
Montalenti, Francesco
Scalise, Emilio
Materials Science
Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic properties induced by 60° dislocations in Ge. Using large-scale DFT calculations, we determine the band structure for both the shuffle and glide sets in their lowest-energy configurations. We also perform charged-defect calculations to aid in the interpretation of complex photoluminescence spectra observed in epitaxial Ge layers. The band structure for the shuffle set reveals defect-induced dispersive bands localized within the band gap near the Γ point, whereas for the glide set, we observe strong overlap with the conduction band. Defect-induced band splitting evident away from Γ reveals Rashba-Dresselhaus spin-orbit coupling, an effect previously reported only for screw dislocations. Remarkably, we find evidence that specific dislocation arrangements can stabilize antiferromagnetic ordering with sizable local magnetic moments and considerable exchange splitting between opposite spin states. These results uncover rich physics in Ge dislocations through the combination of spin-orbit coupling and magnetic ordering, potentially enabling novel defect-based functionalities in Ge devices.
title Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations
topic Materials Science
url https://arxiv.org/abs/2602.04469