Microscopic Origin of Polarization-Controlled Magnetization Switching in FePt/BaTiO$_3$
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arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866912877004193792 |
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| author | Qurat-ul-ain Ho, Thi H. Hong, Soon Cheol Odkhuu, Dorj Rhim, S. H. |
| author_facet | Qurat-ul-ain Ho, Thi H. Hong, Soon Cheol Odkhuu, Dorj Rhim, S. H. |
| contents | Electric-field driven magnetization switching in FePt/BaTiO$_3$ (001) is demonstrated through first-principles calculations. The magnetic easy axis of FePt layer undergoes a transition from in-plane to perpendicular direction upon ferroelectric polarization reversal, a process sensitively controlled by epitaxial strain with threshold strain strain($η$) $η\approx\%$. At this phenomena, a large interfacial magnetoelectric coupling ($α_I = 3.6 \times 10^{-10}$ G$\cdot$cm$^2$/V) is responsible, stemming from the orbital reconstruction. In particular, the redistribution of Pt-$d$ orbital occupancy alters spin-orbit coupling, thereby tuning the competition between magnetic anisotropy ($K_i$) and magnetoelastic energy ($b_1$). Our work clarifies the fundamental physics of strain-engineered magnetoelectricity and suggests a concrete pathway for designing ultra-low-power voltage-controlled magnetic memory. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_04500 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Microscopic Origin of Polarization-Controlled Magnetization Switching in FePt/BaTiO$_3$ Qurat-ul-ain Ho, Thi H. Hong, Soon Cheol Odkhuu, Dorj Rhim, S. H. Materials Science Other Condensed Matter Electric-field driven magnetization switching in FePt/BaTiO$_3$ (001) is demonstrated through first-principles calculations. The magnetic easy axis of FePt layer undergoes a transition from in-plane to perpendicular direction upon ferroelectric polarization reversal, a process sensitively controlled by epitaxial strain with threshold strain strain($η$) $η\approx\%$. At this phenomena, a large interfacial magnetoelectric coupling ($α_I = 3.6 \times 10^{-10}$ G$\cdot$cm$^2$/V) is responsible, stemming from the orbital reconstruction. In particular, the redistribution of Pt-$d$ orbital occupancy alters spin-orbit coupling, thereby tuning the competition between magnetic anisotropy ($K_i$) and magnetoelastic energy ($b_1$). Our work clarifies the fundamental physics of strain-engineered magnetoelectricity and suggests a concrete pathway for designing ultra-low-power voltage-controlled magnetic memory. |
| title | Microscopic Origin of Polarization-Controlled Magnetization Switching in FePt/BaTiO$_3$ |
| topic | Materials Science Other Condensed Matter |
| url | https://arxiv.org/abs/2602.04500 |