Quasi-One-Dimensional Electronic Nature of Ta4SiTe4 Underlying the Giant Thermoelectric Performance
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arXiv
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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866908815360786432 |
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| author | Isshiki, Hironari Tabata, Ayumu Horio, Masafumi Kimata, Motoi Yamakawa, Youichi Okuma, Ryutaro Imai, Miki Matsunaga, Fumiya Takenaka, Koshi Ozawa, Kenichi Otani, YoshiChika Komori, Fumio Matsuda, Iwao Hara, Masahiro Okamoto, Yoshihiko Hashisaka, Masayuki |
| author_facet | Isshiki, Hironari Tabata, Ayumu Horio, Masafumi Kimata, Motoi Yamakawa, Youichi Okuma, Ryutaro Imai, Miki Matsunaga, Fumiya Takenaka, Koshi Ozawa, Kenichi Otani, YoshiChika Komori, Fumio Matsuda, Iwao Hara, Masahiro Okamoto, Yoshihiko Hashisaka, Masayuki |
| contents | Ta4SiTe4 is a one-dimensional van der Waals material that exhibits an exceptionally large thermoelectric power factor below room temperature. However, since this material has been available only in the form of acicular microcrystals, experimental exploration of the electronic properties responsible for its giant thermoelectric performance has long been challenging. In this study, we quantitatively evaluated the one-dimensional electronic nature of Ta4SiTe4 by combining micro-spot angle-resolved photoemission spectroscopy and transport measurements on focused-ion-beam-processed samples. The angle-resolved photoemission spectroscopy measurements reveal anisotropic band dispersions along and perpendicular to the crystallographic c axis. Consistently, transport measurements demonstrate that the resistivity perpendicular to the c axis is approximately five times larger than that along the c axis at 200 K. These results provide direct experimental evidence for the quasi-one-dimensional electronic character of Ta4SiTe4, which underlies its giant thermoelectric response reported previously, and offer fundamental insights into the role of electronic dimensionality in enhancing thermoelectric performance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_05369 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Quasi-One-Dimensional Electronic Nature of Ta4SiTe4 Underlying the Giant Thermoelectric Performance Isshiki, Hironari Tabata, Ayumu Horio, Masafumi Kimata, Motoi Yamakawa, Youichi Okuma, Ryutaro Imai, Miki Matsunaga, Fumiya Takenaka, Koshi Ozawa, Kenichi Otani, YoshiChika Komori, Fumio Matsuda, Iwao Hara, Masahiro Okamoto, Yoshihiko Hashisaka, Masayuki Materials Science Mesoscale and Nanoscale Physics Ta4SiTe4 is a one-dimensional van der Waals material that exhibits an exceptionally large thermoelectric power factor below room temperature. However, since this material has been available only in the form of acicular microcrystals, experimental exploration of the electronic properties responsible for its giant thermoelectric performance has long been challenging. In this study, we quantitatively evaluated the one-dimensional electronic nature of Ta4SiTe4 by combining micro-spot angle-resolved photoemission spectroscopy and transport measurements on focused-ion-beam-processed samples. The angle-resolved photoemission spectroscopy measurements reveal anisotropic band dispersions along and perpendicular to the crystallographic c axis. Consistently, transport measurements demonstrate that the resistivity perpendicular to the c axis is approximately five times larger than that along the c axis at 200 K. These results provide direct experimental evidence for the quasi-one-dimensional electronic character of Ta4SiTe4, which underlies its giant thermoelectric response reported previously, and offer fundamental insights into the role of electronic dimensionality in enhancing thermoelectric performance. |
| title | Quasi-One-Dimensional Electronic Nature of Ta4SiTe4 Underlying the Giant Thermoelectric Performance |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2602.05369 |