Questioning van der Waals Epitaxy of Non-Layered Materials on Mica: The Case of ScN
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866915803392114688 |
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| author | Chowdhury, Susmita Lahiji, Faezeh Alijan Farzad Ottoson, Mikael Donzel-Gargand, Olivier Frost, Robert J. W. Magnuson, Martin Ramanath, Ganpati Febvrier, Arnaud le Eklund, Per |
| author_facet | Chowdhury, Susmita Lahiji, Faezeh Alijan Farzad Ottoson, Mikael Donzel-Gargand, Olivier Frost, Robert J. W. Magnuson, Martin Ramanath, Ganpati Febvrier, Arnaud le Eklund, Per |
| contents | Growing stress-free epitaxial films by van der Waals epitaxy (vdWE) is of interest for realizing flexible optoelectronics and energy devices from freestanding epilayers. However, vdWE of non-layered materials is often presumed or claimed on layered substrates such as mica with inadequate experimental evidence. Here, we demonstrate that the growth of single-domain rocksalt ScN(111) films by sputter deposition on fluorophlogopite mica(001) occurs by conventional epitaxy. X-ray diffraction and electron microscopy reveal the film/substrate epitaxial relationship to be [-101](111)ScN||[010](001)mica. Our results indicating strain buildup seen from the dependence of (111) interplanar spacings, and strain relaxation by dislocation generation, question prior claims of vdWE of non-layered metal nitrides on mica. Our findings show that conventional epitaxy should be the default assumption for non-layered materials unless conditions for vdWE are explicitly established. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_05741 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Questioning van der Waals Epitaxy of Non-Layered Materials on Mica: The Case of ScN Chowdhury, Susmita Lahiji, Faezeh Alijan Farzad Ottoson, Mikael Donzel-Gargand, Olivier Frost, Robert J. W. Magnuson, Martin Ramanath, Ganpati Febvrier, Arnaud le Eklund, Per Materials Science Growing stress-free epitaxial films by van der Waals epitaxy (vdWE) is of interest for realizing flexible optoelectronics and energy devices from freestanding epilayers. However, vdWE of non-layered materials is often presumed or claimed on layered substrates such as mica with inadequate experimental evidence. Here, we demonstrate that the growth of single-domain rocksalt ScN(111) films by sputter deposition on fluorophlogopite mica(001) occurs by conventional epitaxy. X-ray diffraction and electron microscopy reveal the film/substrate epitaxial relationship to be [-101](111)ScN||[010](001)mica. Our results indicating strain buildup seen from the dependence of (111) interplanar spacings, and strain relaxation by dislocation generation, question prior claims of vdWE of non-layered metal nitrides on mica. Our findings show that conventional epitaxy should be the default assumption for non-layered materials unless conditions for vdWE are explicitly established. |
| title | Questioning van der Waals Epitaxy of Non-Layered Materials on Mica: The Case of ScN |
| topic | Materials Science |
| url | https://arxiv.org/abs/2602.05741 |