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| Main Authors: | , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2602.06099 |
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| _version_ | 1866917252202233856 |
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| author | Klein, Dominic Kümmel, Simon Roth, Johannes |
| author_facet | Klein, Dominic Kümmel, Simon Roth, Johannes |
| contents | We investigate the non-thermal material dynamics of strongly excited silicon during ultra-fast laser ablation. In contrast to metals, silicon shows strongly excitation-dependent interatomic bonding strengths, which gives rise to a number of unique material dynamics like non-thermal melting, Coulomb explosions and altered carrier heat conduction due to charge carrier confinement. In this study, we report novel non-thermal ablation mechanisms in the ultra-fast single shot laser ablation of silicon and perform large scale massive multi-parallel simulations on experimentally achievable length scales with atomistic resolution. For this, we model the ultra-fast carrier dynamics utilizing the Thermal-Spike-Model coupled to Molecular Dynamics simulations and include the accompanied excitation-dependent nonthermal bonding strength manipulation by application of the excitation-dependent modified Tersoff Potential. Further, we present first results on the systematic construction of the excitation-dependent phase diagram of silicon by thermodynamic integration. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_06099 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Novel non-thermal Ablation Mechanics in the Laser Ablation of Silicon Klein, Dominic Kümmel, Simon Roth, Johannes Materials Science We investigate the non-thermal material dynamics of strongly excited silicon during ultra-fast laser ablation. In contrast to metals, silicon shows strongly excitation-dependent interatomic bonding strengths, which gives rise to a number of unique material dynamics like non-thermal melting, Coulomb explosions and altered carrier heat conduction due to charge carrier confinement. In this study, we report novel non-thermal ablation mechanisms in the ultra-fast single shot laser ablation of silicon and perform large scale massive multi-parallel simulations on experimentally achievable length scales with atomistic resolution. For this, we model the ultra-fast carrier dynamics utilizing the Thermal-Spike-Model coupled to Molecular Dynamics simulations and include the accompanied excitation-dependent nonthermal bonding strength manipulation by application of the excitation-dependent modified Tersoff Potential. Further, we present first results on the systematic construction of the excitation-dependent phase diagram of silicon by thermodynamic integration. |
| title | Novel non-thermal Ablation Mechanics in the Laser Ablation of Silicon |
| topic | Materials Science |
| url | https://arxiv.org/abs/2602.06099 |