Copertina

Positron annihilation lifetime and Doppler broadening spectral calculations of oxygen-doped 3C-SiC

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Zhao, Yi, Zhang, Hongtao, Li, Qiang, Tang, Xian, Cheng, Guodong
Natura:	Preprint
Pubblicazione:	2026
Soggetti:	Materials Science
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

Positron lifetime calculations for defects in Zn
di: Campillo, J. M., et al.
Pubblicazione: (2024)

Positron lifetime calculation of the elements of the periodic table
di: Robles, J. M. Campillo, et al.
Pubblicazione: (2024)

SiC-TGAP: A machine learning interatomic potential for radiation damage simulations in 3C-SiC
di: Hamedani, Ali, et al.
Pubblicazione: (2025)

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
di: Jousseaume, Yann, et al.
Pubblicazione: (2024)

Measurement and analysis of the Doppler broadened energy spectra of annihilation gamma radiation originating from clean and adsorbate-covered surfaces
di: Lotfimarangloo, S., et al.
Pubblicazione: (2023)

Stability and decoherence analysis of the silicon vacancy in 3C-SiC
di: Fazio, Tommaso, et al.
Pubblicazione: (2022)

Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO$_2$ interface after NO annealing
di: Komatsu, Naoki, et al.
Pubblicazione: (2022)

Molecular dynamics simulation study of mechanical properties of 3C-SiC with extended defects
di: Shmahlii, Serhii, et al.
Pubblicazione: (2026)

An Accurate and Efficient Machine-Learned Potential for SiC from Ambient to Extreme Environments
di: Wu, Jintong, et al.
Pubblicazione: (2025)

Host dependence of PL5 ensemble in 4H-SiC
di: Li, Jiajun, et al.
Pubblicazione: (2025)

Towards predictive atomistic simulations of SiC crystal growth
di: Reichmann, Alexander, et al.
Pubblicazione: (2025)

Controlled fabrication of freestanding monolayer SiC by electron irradiation
di: Da, Yunli, et al.
Pubblicazione: (2024)

Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500$^\circ$C
di: Ferro, Gabriel, et al.
Pubblicazione: (2024)

Comparative study of divacancies in 3C-, 4H- and 6H-SiC
di: Shafizade, Danial, et al.
Pubblicazione: (2025)

Energy shifts and broadening of excitonic resonances in electrostatically-doped semiconductors
di: Dery, Hanan, et al.
Pubblicazione: (2024)

Enhancing and Mapping Thermal Boundary Conductance across Bonded Si/SiC Interface
di: Guo, Rulei, et al.
Pubblicazione: (2024)

Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
di: Cauwet, François, et al.
Pubblicazione: (2024)

Accounting for the length-scale dependence of thermal diffusivity in 3C-SiC measured with transient thermal gratings
di: Vasudeva, Keshav, et al.
Pubblicazione: (2026)

Interfacial Coupling Controls Molecular Epitaxy of HMTP on Graphene/SiC
di: Varshney, Devanshu, et al.
Pubblicazione: (2026)

High-temperature threshold of damage of SiC by swift heavy ions
di: Zainutdinov, D. I., et al.
Pubblicazione: (2024)

Intercalated structures formed by platinum on epitaxial graphene on SiC(0001)
di: Ferbel, Letizia, et al.
Pubblicazione: (2025)

Measurements of dislocations in 4H-SiC with rocking curve imaging
di: Khaliq, Ahmar, et al.
Pubblicazione: (2024)

Molecular Dynamics Study of Defect Evolution Mechanisms in 3C-SiC for Quantum Technologies
di: Ashraf, Irslan Ullah, et al.
Pubblicazione: (2026)

Interface stability of beta-Ga2O3 (100) on oxidized Si- and C-terminated 3C-SiC (001) substrates: a first-principles investigation
di: Licciardi, Marica, et al.
Pubblicazione: (2026)

Si Intercalation Beneath Epitaxial Graphene: Modulating Mott States at the SiC(0001) Interface
di: Tilgner, Niclas, et al.
Pubblicazione: (2025)

Role of Elastic Phonon Couplings in Dictating the Thermal Transport across Atomically Sharp SiC/Si Interfaces
di: He, Qinqin, et al.
Pubblicazione: (2024)

Thermal conductivity of 3C-SiC from configuration space sampling
di: Jochym, Paweł T., et al.
Pubblicazione: (2025)

TCAD Parameters for 4H-SiC: A Review
di: Burin, Jürgen, et al.
Pubblicazione: (2024)

Epitaxially-stabilized growth of wüstite FeO on 4H-SiC
di: Kimbugwe, Faisal, et al.
Pubblicazione: (2025)

Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
di: Younesi, Ali Tayefeh, et al.
Pubblicazione: (2026)

Ultralong-term high-density data storage with atomic defects in SiC
di: Hollenbach, M., et al.
Pubblicazione: (2023)

Pressure-Induced Mechanical Instabilities in Cubic SiC: Structural and Electronic Properties
di: Herrero, Carlos P., et al.
Pubblicazione: (2025)

Effect of edge dislocations on structural and electric properties of 4H-SiC
di: Łażewski, Jan, et al.
Pubblicazione: (2015)

Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface
di: Jain, Arpit, et al.
Pubblicazione: (2025)

Investigation of W-SiC compositionally graded films as a divertor material
di: Lin, Zihan, et al.
Pubblicazione: (2023)

Towards Identifying the PL6 Center in SiC: From First-Principles Screening to Hyperfine Validation of Competing Defect Candidates
di: Zhao, Xin, et al.
Pubblicazione: (2025)

First-Principles Investigation of Surface-Induced Effects on the Properties of Divacancy Qubits in 3C-SiC
di: Viglione, Rosario G., et al.
Pubblicazione: (2025)

The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission
di: Bulancea-Lindvall, Oscar, et al.
Pubblicazione: (2023)

Incongruent Melting and Phase Diagram of SiC from Machine Learning Molecular Dynamics
di: Xie, Yu, et al.
Pubblicazione: (2025)

Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC
di: Bhat, Aaditya, et al.
Pubblicazione: (2024)