Li, Z., Bai, G., Cui, H., Yao, W., Gao, J., Jiang, Q., . . . Luo, J. (2026). Physics Guided Exponential Model Design of High Ge Content SiGe Selective Epitaxy for Gate All Around Source/Drain Applications.
Chicago Style (17th ed.) CitationLi, Zhigang, et al. Physics Guided Exponential Model Design of High Ge Content SiGe Selective Epitaxy for Gate All Around Source/Drain Applications. 2026.
MLA (9th ed.) CitationLi, Zhigang, et al. Physics Guided Exponential Model Design of High Ge Content SiGe Selective Epitaxy for Gate All Around Source/Drain Applications. 2026.
Warning: These citations may not always be 100% accurate.