Cover Image

Physics Guided Exponential Model Design of High Ge Content SiGe Selective Epitaxy for Gate All Around Source/Drain Applications

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Li, Zhigang, Bai, Guobin, Cui, Hengwei, Yao, Wenlong, Gao, Jianfeng, Jiang, Qifeng, Li, Junjie, Li, Junfeng, Li, Yongliang, Yin, Huaxiang, Wang, Xiaolei, Luo, Jun
Format:	Preprint
Published:	2026
Subjects:	Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Si/SiGe multi-channel superlattice structure epitaxial growth with segmented temperature control for Next-Generation Logic Devices
by: Yao, Wenlong, et al.
Published: (2026)

Electrostatic Discharge Protection Diodes with Stacked SiGe/Si Fin Field‐Effect Transistors in Gate‐All‐Around Technology
by: Jiayi Zhang, et al.
Published: (2025)

Direct Observation of Etching‐Induced Inhomogeneous Strain in Advanced Si/SiGe Stack for Gate‐All‐Around Transistor
by: Lan Li, et al.
Published: (2025)

Active Noise Reduction in Si/SiGe Gated Quantum Dots
by: Bharadwaj, Rajat, et al.
Published: (2025)

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits
by: Kong, Zhenzhen, et al.
Published: (2024)

Technology Computer‐Aided Design Model for SiGe Oxidation and Ge Diffusion Along Oxide/SiGe Interfaces
by: Christoph Zechner, et al.
Published: (2024)

Electrical Characterization of hexagonal SiGe
by: Bollier, Isabelle, et al.
Published: (2025)

SiGe/Si(111)/SiGe heterostructure for Si spin qubits with electrons confined in L valley of conduction band
by: Tokunaga, Takafumi, et al.
Published: (2026)

g-tensor Optimization in Ge/SiGe Quantum Dots
by: Shojaei, Aram, et al.
Published: (2026)

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
by: Ma, Jingrui, et al.
Published: (2026)

Phonon-Induced Exchange Gate Infidelities in Semiconducting Si-SiGe Spin Qubits
by: Brooks, Matthew, et al.
Published: (2024)

Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
by: Stehouwer, Lucas E. A., et al.
Published: (2025)

New device applications of SiGe heterostructures
by: Shiraki Yasuhiro
Published: (2003)

High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures
by: Nigro, Arianna, et al.
Published: (2024)

Back‐Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates
by: Christoph Beyer, et al.
Published: (2024)

Reducing disorder in Ge quantum wells by using thick SiGe barriers
by: Costa, Davide, et al.
Published: (2024)

High-fidelity EDSR in Si/SiGe Wiggle Wells
by: Soomro, Hudaiba, et al.
Published: (2026)

On-chip cryogenic multiplexing of Si/SiGe quantum devices
by: Wolfe, M. A., et al.
Published: (2024)

Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors
by: Mendez, Juan P., et al.
Published: (2026)

Improvement of Selective Quasi Atomic Layer Etching of SiGe/Si by Plasma Surface Modification for Fishbone FET Fabrication
by: Ziyi Hu, et al.
Published: (2025)

Statistical Structure of Charge Disorder in Si/SiGe Quantum Dots
by: Samadi, Saeed, et al.
Published: (2025)

Valley Splittings in Si/SiGe Heterostructures from First Principles
by: Cvitkovich, Lukas, et al.
Published: (2025)

Characterization of individual charge fluctuators in Si/SiGe quantum dots
by: Ye, Feiyang, et al.
Published: (2024)

Heavy Hole vs. Light Hole Spin Qubits: A Strain-Driven Study of SiGe/Ge and GeSn/Ge
by: Dsouza, Kelvin, et al.
Published: (2024)

THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
by: Stark, David, et al.
Published: (2021)

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
by: Massai, L., et al.
Published: (2023)

Disentangling orbital and confinement contributions to $g$-factor in Ge/SiGe hole quantum dots
by: Sommer, L., et al.
Published: (2026)

High-quality and field resilient microwave resonators on Ge/SiGe quantum well heterostructures
by: Ruggiero, Luigi, et al.
Published: (2025)

World's First Monolithic SiGe QKD Transmitter Chip
by: Honz, Florian, et al.
Published: (2025)

Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
by: Wang, Ning, et al.
Published: (2024)

Persistence of Entangled States and High Fidelity Quantum Gate Operations in Si/SiGe Spin Qubits at High Temperature
by: Amitonov, S., et al.
Published: (2024)

Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
by: Cakar, Efe, et al.
Published: (2024)

Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates
by: Park, Jaemin, et al.
Published: (2025)

Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
by: Daoust, P., et al.
Published: (2025)

Nuclear Spin‐Free 70 Ge/ 28 Si 70 Ge Quantum Well Heterostructures Grown on Industrial SiGe‐Buffered Wafers
by: Patrick Daoust, et al.
Published: (2026)

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
by: Losert, Merritt P., et al.
Published: (2023)

Conveyor-mode electron shuttling through a T-junction in Si/SiGe
by: Beer, Max, et al.
Published: (2026)

Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
by: Németh, Róbert, et al.
Published: (2024)

Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
by: Ye, Feiyang, et al.
Published: (2024)

Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles
by: Cvitkovich, Lukas, et al.
Published: (2026)