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Physics Guided Exponential Model Design of High Ge Content SiGe Selective Epitaxy for Gate All Around Source/Drain Applications

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Li, Zhigang, Bai, Guobin, Cui, Hengwei, Yao, Wenlong, Gao, Jianfeng, Jiang, Qifeng, Li, Junjie, Li, Junfeng, Li, Yongliang, Yin, Huaxiang, Wang, Xiaolei, Luo, Jun
Format:	Preprint
Publié:	2026
Sujets:	Applied Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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