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| Autores principales: | , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2602.07925 |
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- High germanium content silicon germanium (SiGe) epitaxy is critical for strain engineering in advanced gate all around (GAA) transistors. This paper demonstrates a physics guided exponential function model that quantitatively links selective epitaxial growth (SEG) parameters to Ge incorporation kinetics in nanoscale trenches. By coupling surface diffusion limited transport, gradient strain, and competitive adsorption dynamics, the model predicts optimal conditions for bottom-up filling with maximal Ge content. For trenches with widths of approximately 60 nm, the optimized process achieved a maximum Ge content of 57.93% and demonstrated 100% selectivity against silicon nitride (SiN) and silicon dioxide (SiO). Cross sectional TEM and EDS analyses reveal a graded Ge profile that minimizes interfacial defects and strain energy. Our results show that the established process physics correlation will significantly facilitate the development of GAA devices with 5nm CMOS technology nodes and beyond.