2D ferroelectric narrow-bandgap semiconductor Wurtzite' type alpha-In2Se3 and its silicon-compatible growth
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2026
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| author | Jiang, Yuxuan Ning, Xingkun Liu, Renhui Song, Kepeng Ali, Sajjad Deng, Haoyue Li, Yizhuo Huang, Biaohong Qiu, Jianhang Zhu, Xiaofei Fan, Zhen Li, Qiankun Qin, Chengbing Xue, Fei Yang, Teng Li, Bing Liu, Gang Hu, Weijin Li, Lain-Jong Zhang, Zhidong |
| author_facet | Jiang, Yuxuan Ning, Xingkun Liu, Renhui Song, Kepeng Ali, Sajjad Deng, Haoyue Li, Yizhuo Huang, Biaohong Qiu, Jianhang Zhu, Xiaofei Fan, Zhen Li, Qiankun Qin, Chengbing Xue, Fei Yang, Teng Li, Bing Liu, Gang Hu, Weijin Li, Lain-Jong Zhang, Zhidong |
| contents | 2D van der Waals ferroelectrics, particularly alpha-In2Se3, have emerged as an attractive building block for next-generation information storage technologies due to their moderate band gap and robust ferroelectricity stabilized by dipole locking. alpha-In2Se3 can adopt either the distorted zincblende or wurtzite structures; however, the wurtzite phase has yet to be experimental-ly validated, and its large-scale synthesis poses significant challenges. Here, we report an in-situ transport growth of centimeter-scale wurtzite type alpha-In2Se3 films directly on SiO2 substrates using a process combining pulsed laser deposition and chemical vapor deposition. We demonstrate that it is a narrow bandgap ferroelectric semiconductor, featuring a Curie tem-perature exceeding 620 K, a tunable bandgap (0.8-1.6 eV) modulated by charged domain walls, and a large optical absorption coefficient of 1.3 times 10 powers 6 per centemeter. Moreover, light absorption promotes the dynamic conductance range, linearity, and symmetry of the synapse devices, leading to a high recognition accuracy of 92.3 percent in a supervised pattern classification task for neuromorphic computing. Our findings demonstrate a ferroelectric polymorphism of In2Se3, highlighting its potential in ferroelectric synapses for neuromorphic computing. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2602_08381 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | 2D ferroelectric narrow-bandgap semiconductor Wurtzite' type alpha-In2Se3 and its silicon-compatible growth Jiang, Yuxuan Ning, Xingkun Liu, Renhui Song, Kepeng Ali, Sajjad Deng, Haoyue Li, Yizhuo Huang, Biaohong Qiu, Jianhang Zhu, Xiaofei Fan, Zhen Li, Qiankun Qin, Chengbing Xue, Fei Yang, Teng Li, Bing Liu, Gang Hu, Weijin Li, Lain-Jong Zhang, Zhidong Materials Science 82 2D van der Waals ferroelectrics, particularly alpha-In2Se3, have emerged as an attractive building block for next-generation information storage technologies due to their moderate band gap and robust ferroelectricity stabilized by dipole locking. alpha-In2Se3 can adopt either the distorted zincblende or wurtzite structures; however, the wurtzite phase has yet to be experimental-ly validated, and its large-scale synthesis poses significant challenges. Here, we report an in-situ transport growth of centimeter-scale wurtzite type alpha-In2Se3 films directly on SiO2 substrates using a process combining pulsed laser deposition and chemical vapor deposition. We demonstrate that it is a narrow bandgap ferroelectric semiconductor, featuring a Curie tem-perature exceeding 620 K, a tunable bandgap (0.8-1.6 eV) modulated by charged domain walls, and a large optical absorption coefficient of 1.3 times 10 powers 6 per centemeter. Moreover, light absorption promotes the dynamic conductance range, linearity, and symmetry of the synapse devices, leading to a high recognition accuracy of 92.3 percent in a supervised pattern classification task for neuromorphic computing. Our findings demonstrate a ferroelectric polymorphism of In2Se3, highlighting its potential in ferroelectric synapses for neuromorphic computing. |
| title | 2D ferroelectric narrow-bandgap semiconductor Wurtzite' type alpha-In2Se3 and its silicon-compatible growth |
| topic | Materials Science 82 |
| url | https://arxiv.org/abs/2602.08381 |