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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2602.08841 |
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| _version_ | 1866910016673415168 |
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| author | Li, Yizhuo Song, Kepeng Zhu, Meixiong Li, Xiaoqi Zeng, Zhaowei Luo, KangMing Jiang, Yuxuan Zhang, Zhe Li, Cuihong Wang, Yujia Li, Bing Wang, Zhihong Zhang, Zhidong Hu, Weijin |
| author_facet | Li, Yizhuo Song, Kepeng Zhu, Meixiong Li, Xiaoqi Zeng, Zhaowei Luo, KangMing Jiang, Yuxuan Zhang, Zhe Li, Cuihong Wang, Yujia Li, Bing Wang, Zhihong Zhang, Zhidong Hu, Weijin |
| contents | Dielectric capacitors are essential for energy storage systems due to their high-power density and fast operation speed. However, optimizing energy storage density with concurrent thermal stability remains a substantial challenge. Here, we develop a flash annealing process with ultrafast heating and cooling rates of 1000 oC/s, which facilitates the rapid crystallization of PbZrO3 film within a mere second, while locking its high-temperature microstructure to room temperature. This produces compact films with sub-grain boundaries fraction of 36%, nanodomains of several nanometers, and negligible lead volatilization. These contribute to relaxor antiferroelectric film with a high breakdown strength (4800 kV/cm) and large polarization (70 uC/cm2). Consequently, we have achieved a high energy storage density of 63.5 J/cm3 and outstanding thermal stability with performance degradation less than 3% up to 250 oC. Our approach is extendable to ferroelectrics like Pb(Zr0.52Ti0.48)O3 and on wafer scale, providing on-chip nonlinear dielectric energy storage solutions with industrial scalability. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_08841 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Flash annealing-engineered wafer-scale relaxor antiferroelectrics for enhanced energy storage performance Li, Yizhuo Song, Kepeng Zhu, Meixiong Li, Xiaoqi Zeng, Zhaowei Luo, KangMing Jiang, Yuxuan Zhang, Zhe Li, Cuihong Wang, Yujia Li, Bing Wang, Zhihong Zhang, Zhidong Hu, Weijin Materials Science 82 Dielectric capacitors are essential for energy storage systems due to their high-power density and fast operation speed. However, optimizing energy storage density with concurrent thermal stability remains a substantial challenge. Here, we develop a flash annealing process with ultrafast heating and cooling rates of 1000 oC/s, which facilitates the rapid crystallization of PbZrO3 film within a mere second, while locking its high-temperature microstructure to room temperature. This produces compact films with sub-grain boundaries fraction of 36%, nanodomains of several nanometers, and negligible lead volatilization. These contribute to relaxor antiferroelectric film with a high breakdown strength (4800 kV/cm) and large polarization (70 uC/cm2). Consequently, we have achieved a high energy storage density of 63.5 J/cm3 and outstanding thermal stability with performance degradation less than 3% up to 250 oC. Our approach is extendable to ferroelectrics like Pb(Zr0.52Ti0.48)O3 and on wafer scale, providing on-chip nonlinear dielectric energy storage solutions with industrial scalability. |
| title | Flash annealing-engineered wafer-scale relaxor antiferroelectrics for enhanced energy storage performance |
| topic | Materials Science 82 |
| url | https://arxiv.org/abs/2602.08841 |