Tailoring Ultrathin Magnetic Multilayers at Terraced Topologically Insulating Interfaces for Perpendicularly Magnetized Domains

Fuente: arXiv
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Autori principali: Brereton, Benjamin A., Hait, Soumyarup, Yagmur, Ahmet, Kinane, Christy J., Maccherozzi, Francesco, Conroy, Michele, Sasaki, Satoshi, Moore, Thomas A., Dhesi, Sarnjeet S., Langridge, Sean, Marrows, Christopher H.
Natura: Preprint
Pubblicazione: 2026
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author Brereton, Benjamin A.
Hait, Soumyarup
Yagmur, Ahmet
Kinane, Christy J.
Maccherozzi, Francesco
Conroy, Michele
Sasaki, Satoshi
Moore, Thomas A.
Dhesi, Sarnjeet S.
Langridge, Sean
Marrows, Christopher H.
author_facet Brereton, Benjamin A.
Hait, Soumyarup
Yagmur, Ahmet
Kinane, Christy J.
Maccherozzi, Francesco
Conroy, Michele
Sasaki, Satoshi
Moore, Thomas A.
Dhesi, Sarnjeet S.
Langridge, Sean
Marrows, Christopher H.
contents Topological insulators and skyrmion-hosting, chiral magnetic multilayers are two well-explored areas of modern condensed matter physics, each offering unique advantages for spintronics applications. In this paper, we demonstrate the optimization process for the growth of a Bi$_2$Se$_3$/buffer/[Pt/CoB/Ru]$_{\times N}$ heterostructure that combines these two material classes: the Bi$_2$Se$_3$ epilayer was grown by molecular beam epitaxy before transfer under ultrahigh vacuum to a separate growth chamber where the polycrystalline metallic multilayer was sputter deposited. The structure of the samples was characterized by co-fitted X-ray and polarized neutron reflectometry measurements and scanning transmission electron microscopy. Polarized neutron models and standard magnetometry show that a buffer layer exceeding a critical thickness is required to obtain the desired uniform, perpendicular magnetic anisotropy in every magnetic layer in the multilayer. Samples with both Ta and Mo buffers were used requiring thicknesses of 1.5 and 0.9 nm respectively. In minimizing the Bi$_2$Se$_3$ terracing, buffered samples yield well-defined, out-of-plane, magnetic domains suitable for spin-orbit torque induced manipulation as determined by X-ray photoemission electron microscopy.
format Preprint
id arxiv_https___arxiv_org_abs_2602_08950
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Tailoring Ultrathin Magnetic Multilayers at Terraced Topologically Insulating Interfaces for Perpendicularly Magnetized Domains
Brereton, Benjamin A.
Hait, Soumyarup
Yagmur, Ahmet
Kinane, Christy J.
Maccherozzi, Francesco
Conroy, Michele
Sasaki, Satoshi
Moore, Thomas A.
Dhesi, Sarnjeet S.
Langridge, Sean
Marrows, Christopher H.
Materials Science
Mesoscale and Nanoscale Physics
Topological insulators and skyrmion-hosting, chiral magnetic multilayers are two well-explored areas of modern condensed matter physics, each offering unique advantages for spintronics applications. In this paper, we demonstrate the optimization process for the growth of a Bi$_2$Se$_3$/buffer/[Pt/CoB/Ru]$_{\times N}$ heterostructure that combines these two material classes: the Bi$_2$Se$_3$ epilayer was grown by molecular beam epitaxy before transfer under ultrahigh vacuum to a separate growth chamber where the polycrystalline metallic multilayer was sputter deposited. The structure of the samples was characterized by co-fitted X-ray and polarized neutron reflectometry measurements and scanning transmission electron microscopy. Polarized neutron models and standard magnetometry show that a buffer layer exceeding a critical thickness is required to obtain the desired uniform, perpendicular magnetic anisotropy in every magnetic layer in the multilayer. Samples with both Ta and Mo buffers were used requiring thicknesses of 1.5 and 0.9 nm respectively. In minimizing the Bi$_2$Se$_3$ terracing, buffered samples yield well-defined, out-of-plane, magnetic domains suitable for spin-orbit torque induced manipulation as determined by X-ray photoemission electron microscopy.
title Tailoring Ultrathin Magnetic Multilayers at Terraced Topologically Insulating Interfaces for Perpendicularly Magnetized Domains
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2602.08950