Saved in:
| Main Authors: | , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2602.10941 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Table of Contents:
- Ultrawide-bandgap semiconductors are attractive for solar-blind ultraviolet (UV) detection owing to their intrinsically low noise and high spectral selectivity, yet their deployment in large-area, high-density electronic imaging systems remains limited by a fundamental trade-off between material quality, device speed, and compatibility with high-density planar silicon readout circuits. Here, we report a membrane-enabled integration platform based on transferable single-crystalline beta-Ga2O3 that overcomes these constraints at the system level. By exploiting the weak interplanar bonding of beta-Ga2O3 (100) plane, we obtain wafer-scale freestanding single-crystalline membranes that enable vertically integrated photodiodes with sub-microsecond, non-persistent photoresponse and high UV-visible rejection. Crucially, we introduce a stitching-based membrane assembly strategy that decouples array resolution from the size of the source single-crystalline substrate, allowing high-resolution photodetector arrays to be integrated onto silicon thin-film-transistor backplanes. The modular assembled active-matrix UV imaging arrays exhibit uniform solar-blind response without image lag, in stark contrast to arrays based on amorphous or polycrystalline films. Beyond beta-Ga2O3, this membrane-enabled and stitching-based modular integration strategy provides a general route toward high-speed, high-resolution electronic imaging systems using transferable single-crystalline semiconductors.