Cho, Y., Yu, C., Xing, H. G., & Jena, D. (2026). Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy.
Style de citation Chicago (17e éd.)Cho, YongJin, Changkai Yu, Huili Grace Xing, et Debdeep Jena. Dependence of the Mn Sticking Coefficient on Ga-rich, N-rich, and Ga/N-flux-free Conditions in GaN Grown by Plasma-assisted Molecular Beam Epitaxy. 2026.
Style de citation MLA (9e éd.)Cho, YongJin, et al. Dependence of the Mn Sticking Coefficient on Ga-rich, N-rich, and Ga/N-flux-free Conditions in GaN Grown by Plasma-assisted Molecular Beam Epitaxy. 2026.
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