Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866910041411420160 |
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| author | Cho, YongJin Yu, Changkai Xing, Huili Grace Jena, Debdeep |
| author_facet | Cho, YongJin Yu, Changkai Xing, Huili Grace Jena, Debdeep |
| contents | This brief report examines the influence of Ga/N flux conditions on Mn incorporation in GaN. Mn-doped GaN layers were grown at 680$^{\circ}$C by molecular beam epitaxy on a Ga-polar GaN(0001) template substrate under Ga-rich, N-rich, and no-flux conditions (i.e., Mn $δ$ doping). Mn incorporation was highest under N-rich condition, lowest under Ga-rich condition, and intermediate in the absence of Ga and N fluxes. For the growth conditions examined in this study, the corresponding Mn sticking coefficients, relative to that of the N-rich condition, were determined to be 0.31 for no-flux growth and 0.01 for the Ga-rich growth. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_12882 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy Cho, YongJin Yu, Changkai Xing, Huili Grace Jena, Debdeep Materials Science This brief report examines the influence of Ga/N flux conditions on Mn incorporation in GaN. Mn-doped GaN layers were grown at 680$^{\circ}$C by molecular beam epitaxy on a Ga-polar GaN(0001) template substrate under Ga-rich, N-rich, and no-flux conditions (i.e., Mn $δ$ doping). Mn incorporation was highest under N-rich condition, lowest under Ga-rich condition, and intermediate in the absence of Ga and N fluxes. For the growth conditions examined in this study, the corresponding Mn sticking coefficients, relative to that of the N-rich condition, were determined to be 0.31 for no-flux growth and 0.01 for the Ga-rich growth. |
| title | Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy |
| topic | Materials Science |
| url | https://arxiv.org/abs/2602.12882 |