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Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Cho, YongJin, Yu, Changkai, Xing, Huili Grace, Jena, Debdeep
Natura:	Preprint
Pubblicazione:	2026
Soggetti:	Materials Science
Accesso online:	Acceder al recurso
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