Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866913119449645056 |
|---|---|
| author | Sheibani, Aida Zamani, Mohammad Paillard, Charles Moorthi, Kanagaraj de Oliveira, Fernando Maia Kryvyi, Serhii Benamara, Mourad Stanchu, Hryhorii Gunder, Calbi Churchill, Hugh Mazur, Yuriy I. Salamo, Gregory |
| author_facet | Sheibani, Aida Zamani, Mohammad Paillard, Charles Moorthi, Kanagaraj de Oliveira, Fernando Maia Kryvyi, Serhii Benamara, Mourad Stanchu, Hryhorii Gunder, Calbi Churchill, Hugh Mazur, Yuriy I. Salamo, Gregory |
| contents | Previous studies of the growth of two-dimensional (2D) gallium selenide (GaSe) by molecular beam epitaxy (MBE) on a gallium arsenide (GaAs) three-dimensional (3D) substrate have reported significant differences in growth morphology, polytype, and the nature of the interface. The results differ, ranging from GaSe 2D film growth at tilted 2D planes to observed spiral structures, thereby calling for a deeper understanding of the impact of the substrate interface on the growth of GaSe films. In this paper, we conduct a comprehensive reexamination of the growth mechanism of GaSe on GaAs substrates with (211)B and (001)B orientations, investigating the nature of the 2D/3D interface and the resulting morphology of the 2D GaSe films. We do this by investigating different methods of preparation of the GaAs substrate surface before the growth of GaSe by MBE, the importance of which has not been considered before. Our results resolve the mechanistic origin of tilted versus non-tilted 2D growth and establish a general interface-driven orientation selection rule linking substrate symmetry and dangling-bond coordination to layered heteroepitaxy. This framework provides a scalable interface-engineering pathway for deterministic control of layered chalcogenide heterostructures and enables wafer-scale integration with established semiconductor device platforms. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_12899 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations Sheibani, Aida Zamani, Mohammad Paillard, Charles Moorthi, Kanagaraj de Oliveira, Fernando Maia Kryvyi, Serhii Benamara, Mourad Stanchu, Hryhorii Gunder, Calbi Churchill, Hugh Mazur, Yuriy I. Salamo, Gregory Materials Science Previous studies of the growth of two-dimensional (2D) gallium selenide (GaSe) by molecular beam epitaxy (MBE) on a gallium arsenide (GaAs) three-dimensional (3D) substrate have reported significant differences in growth morphology, polytype, and the nature of the interface. The results differ, ranging from GaSe 2D film growth at tilted 2D planes to observed spiral structures, thereby calling for a deeper understanding of the impact of the substrate interface on the growth of GaSe films. In this paper, we conduct a comprehensive reexamination of the growth mechanism of GaSe on GaAs substrates with (211)B and (001)B orientations, investigating the nature of the 2D/3D interface and the resulting morphology of the 2D GaSe films. We do this by investigating different methods of preparation of the GaAs substrate surface before the growth of GaSe by MBE, the importance of which has not been considered before. Our results resolve the mechanistic origin of tilted versus non-tilted 2D growth and establish a general interface-driven orientation selection rule linking substrate symmetry and dangling-bond coordination to layered heteroepitaxy. This framework provides a scalable interface-engineering pathway for deterministic control of layered chalcogenide heterostructures and enables wafer-scale integration with established semiconductor device platforms. |
| title | Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations |
| topic | Materials Science |
| url | https://arxiv.org/abs/2602.12899 |