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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2602.14031 |
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| _version_ | 1866908835308896256 |
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| author | Cong, Rongqing Husain, Sajid Su, Yumin Manipatruni, Sasikanth Ahmed, Naveed Nikonov, Dmitri E. Ramesh, Ramamoorthy Yang, Kaiyuan Yao, Zhi Jackie |
| author_facet | Cong, Rongqing Husain, Sajid Su, Yumin Manipatruni, Sasikanth Ahmed, Naveed Nikonov, Dmitri E. Ramesh, Ramamoorthy Yang, Kaiyuan Yao, Zhi Jackie |
| contents | We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100 ps switching, a remnant polarization of 20 uC/cm2, and a readout voltage contrast close to 1mV between high and low-resistance states. To connect device physics to circuit behavior, we develop and experimentally validate a compact circuit model that captures spin Hall injection and spin transport. Simulations with optimized material parameters predict output voltages > 100mV, enabling cascading without external amplification. Using this framework, we design MEMM-based memory and logic blocks, including a 1T1R array, two inverter implementations (complementary two-device and single-device), and a three-input majority gate, and evaluate deep-pipelined operation. The model projects switching energies down to 1 aJ per operation and logic propagation delays of 30-60 ps, indicating MEMM as a promising platform for energy-constrained, high throughput computing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_14031 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | A Magnon-Based Electric Field Controlled Magnetoelectric Device for Energy-Efficient Logic-in-Memory Cong, Rongqing Husain, Sajid Su, Yumin Manipatruni, Sasikanth Ahmed, Naveed Nikonov, Dmitri E. Ramesh, Ramamoorthy Yang, Kaiyuan Yao, Zhi Jackie Materials Science We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100 ps switching, a remnant polarization of 20 uC/cm2, and a readout voltage contrast close to 1mV between high and low-resistance states. To connect device physics to circuit behavior, we develop and experimentally validate a compact circuit model that captures spin Hall injection and spin transport. Simulations with optimized material parameters predict output voltages > 100mV, enabling cascading without external amplification. Using this framework, we design MEMM-based memory and logic blocks, including a 1T1R array, two inverter implementations (complementary two-device and single-device), and a three-input majority gate, and evaluate deep-pipelined operation. The model projects switching energies down to 1 aJ per operation and logic propagation delays of 30-60 ps, indicating MEMM as a promising platform for energy-constrained, high throughput computing. |
| title | A Magnon-Based Electric Field Controlled Magnetoelectric Device for Energy-Efficient Logic-in-Memory |
| topic | Materials Science |
| url | https://arxiv.org/abs/2602.14031 |