Dynamical screening effects on formation of swift heavy ions damage in GaN
Fuente:
arXiv
Saved in:
| Main Authors: | Moskalets, S. V., Rymzhanov, R. A., Volkov, A. E. |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
High-temperature threshold of damage of SiC by swift heavy ions
by: Zainutdinov, D. I., et al.
Published: (2024)
by: Zainutdinov, D. I., et al.
Published: (2024)
Swift heavy ions in polyethylene: simulation of damage formation along the path
by: Babaev, P., et al.
Published: (2024)
by: Babaev, P., et al.
Published: (2024)
Swift heavy ion track formation in SiC films under high-temperature irradiation
by: Zainutdinov, D. I., et al.
Published: (2025)
by: Zainutdinov, D. I., et al.
Published: (2025)
Creating mixed-phase states in cadmium sulfide by swift heavy ion irradiation
by: Peña, Aldo Artímez, et al.
Published: (2025)
by: Peña, Aldo Artímez, et al.
Published: (2025)
Atomic-Scale Insights into Damage Produced by Swift Heavy Ions in Polyethylene
by: Babaev, P., et al.
Published: (2023)
by: Babaev, P., et al.
Published: (2023)
Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
by: Jmerik, V. N., et al.
Published: (2026)
by: Jmerik, V. N., et al.
Published: (2026)
Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
by: Zhou, Guangnan, et al.
Published: (2021)
by: Zhou, Guangnan, et al.
Published: (2021)
Effects of the built-in electric field on free and bound excitons in a polar GaN/AlGaN/GaN based heterostructure
by: Méchin, Loïc, et al.
Published: (2025)
by: Méchin, Loïc, et al.
Published: (2025)
Carbon in GaN as a nonradiative recombination center
by: Zhao, Fangzhou, et al.
Published: (2025)
by: Zhao, Fangzhou, et al.
Published: (2025)
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
by: Zettler, J. K., et al.
Published: (2024)
by: Zettler, J. K., et al.
Published: (2024)
Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN
by: Moneta, J., et al.
Published: (2024)
by: Moneta, J., et al.
Published: (2024)
DFT modelling of stacking faults in hexagonal and cubic GaN
by: Wang, Zijie, et al.
Published: (2026)
by: Wang, Zijie, et al.
Published: (2026)
Experimental demonstration of a Two-Dimensional Hole Gas (2DHG) in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
by: Méchin, Loïc, et al.
Published: (2023)
by: Méchin, Loïc, et al.
Published: (2023)
On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact
by: Duraz, Jules, et al.
Published: (2024)
by: Duraz, Jules, et al.
Published: (2024)
Quantum oscillations of holes in GaN
by: Chang, Chuan F. C., et al.
Published: (2025)
by: Chang, Chuan F. C., et al.
Published: (2025)
On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films
by: Kruszewski, Piotr, et al.
Published: (2025)
by: Kruszewski, Piotr, et al.
Published: (2025)
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
by: Fernández-Garrido, Sergio, et al.
Published: (2024)
by: Fernández-Garrido, Sergio, et al.
Published: (2024)
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
by: Nguyen, Thai-Son, et al.
Published: (2024)
by: Nguyen, Thai-Son, et al.
Published: (2024)
Time-resolved dynamics of GaN waveguide polaritons
by: Méchin, Loïc, et al.
Published: (2025)
by: Méchin, Loïc, et al.
Published: (2025)
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
by: Matys, Maciej, et al.
Published: (2025)
by: Matys, Maciej, et al.
Published: (2025)
Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations
by: Tsamo, Guy, et al.
Published: (2024)
by: Tsamo, Guy, et al.
Published: (2024)
Comparison of interband related optical transitions and excitons in ZnGeN$_2$ and GaN
by: Dernek, Ozan, et al.
Published: (2023)
by: Dernek, Ozan, et al.
Published: (2023)
A stochastic simulation of the dislocation-mediated etching of porous GaN distributed Bragg reflectors
by: Sokolinski, Piotr, et al.
Published: (2026)
by: Sokolinski, Piotr, et al.
Published: (2026)
High Mobility Multiple-Channel AlScN/GaN Heterostructures
by: Asteris, Aias, et al.
Published: (2025)
by: Asteris, Aias, et al.
Published: (2025)
Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
by: Kim, Minho, et al.
Published: (2025)
by: Kim, Minho, et al.
Published: (2025)
InGaN Nanopixel Arrays on Single Crystal GaN Substrate
by: Anand, Nirmal, et al.
Published: (2025)
by: Anand, Nirmal, et al.
Published: (2025)
Neural-network reconstruction of THz transmission spectra using electrically tunable AlGaN/GaN plasmonic-crystal analyzer
by: Witkowska, A., et al.
Published: (2026)
by: Witkowska, A., et al.
Published: (2026)
A cascade model for the defect-driven etching of porous GaN distributed Bragg reflectors
by: Thornley, Ben, et al.
Published: (2025)
by: Thornley, Ben, et al.
Published: (2025)
Quantum effects in surface diffusion: application to diffusion of nitrogen adatoms over GaN(0001) surface
by: Strak, Paweł, et al.
Published: (2025)
by: Strak, Paweł, et al.
Published: (2025)
Site-selective enhancement of Eu emission in delta-doped GaN
by: Klein, Amelia R., et al.
Published: (2025)
by: Klein, Amelia R., et al.
Published: (2025)
Physics of acceptors in GaN: Koopmans tuned HSE hybrid functional calculations and experiment
by: Demchenko, Denis O., et al.
Published: (2024)
by: Demchenko, Denis O., et al.
Published: (2024)
Dynamic Modulation of Electronic and Optical Properties in GaN Bilayers by Interlayer Sliding
by: Kim, Heeju, et al.
Published: (2025)
by: Kim, Heeju, et al.
Published: (2025)
Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD
by: Kaganer, Vladimir M., et al.
Published: (2025)
by: Kaganer, Vladimir M., et al.
Published: (2025)
Preliminary Demonstration of Diamond-GaN pn Diodes via Grafting
by: Zhou, Jie, et al.
Published: (2025)
by: Zhou, Jie, et al.
Published: (2025)
Thermal analysis of GaN-based photonic membranes for optoelectronics
by: Seemann, Wilken, et al.
Published: (2024)
by: Seemann, Wilken, et al.
Published: (2024)
Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles
by: Fernández-Garrido, Sergio, et al.
Published: (2024)
by: Fernández-Garrido, Sergio, et al.
Published: (2024)
Simulation and modeling of the electronic structure of GaAs damage clusters
by: Moussa, Jonathan E., et al.
Published: (2012)
by: Moussa, Jonathan E., et al.
Published: (2012)
Revisiting the epitaxial Si$_3$N$_4$ crystalline cap on AlGaN/GaN via evolutionary structure search
by: Chen, Xin, et al.
Published: (2025)
by: Chen, Xin, et al.
Published: (2025)
Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire
by: Hu, Chenxi, et al.
Published: (2025)
by: Hu, Chenxi, et al.
Published: (2025)
In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 °C
by: Li, Botong, et al.
Published: (2025)
by: Li, Botong, et al.
Published: (2025)
Similar Items
-
High-temperature threshold of damage of SiC by swift heavy ions
by: Zainutdinov, D. I., et al.
Published: (2024) -
Swift heavy ions in polyethylene: simulation of damage formation along the path
by: Babaev, P., et al.
Published: (2024) -
Swift heavy ion track formation in SiC films under high-temperature irradiation
by: Zainutdinov, D. I., et al.
Published: (2025) -
Creating mixed-phase states in cadmium sulfide by swift heavy ion irradiation
by: Peña, Aldo Artímez, et al.
Published: (2025) -
Atomic-Scale Insights into Damage Produced by Swift Heavy Ions in Polyethylene
by: Babaev, P., et al.
Published: (2023)