Disorder-driven stochastic dynamics in Mott resistive-switching systems
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arXiv
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| Auteurs principaux: | , , , , |
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| Format: | Preprint |
| Publié: |
2026
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| _version_ | 1866918339766386688 |
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| author | Alspaugh, David J. Fratino, Lorenzo Ghazikhanian, Nareg Schuller, Ivan K. Rozenberg, Marcelo |
| author_facet | Alspaugh, David J. Fratino, Lorenzo Ghazikhanian, Nareg Schuller, Ivan K. Rozenberg, Marcelo |
| contents | Controlled disorder in correlated materials provides a new route to emergent stochastic dynamics in neuromorphic hardware. Here we show that focused ion beam irradiation in VO$_{2}$- and V$_{2}$O$_{3}$-based resistive-switching oscillators induces a transition from regular periodic oscillations to strongly irregular stochastic firing, while simultaneously reducing the required switching energy by orders of magnitude. Under an applied electric field, these materials undergo a volatile insulator-to-metal transition characterized by the formation of percolating metallic filaments within an insulating bulk. Using numerical simulations based on the Mott resistor network, we demonstrate that defect-induced modifications to filament nucleation and stability drive these devices into stochastic oscillatory regimes. These results are validated by experimental measurements on irradiated VO$_{2}$ and V$_{2}$O$_{3}$ devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_14173 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Disorder-driven stochastic dynamics in Mott resistive-switching systems Alspaugh, David J. Fratino, Lorenzo Ghazikhanian, Nareg Schuller, Ivan K. Rozenberg, Marcelo Strongly Correlated Electrons Controlled disorder in correlated materials provides a new route to emergent stochastic dynamics in neuromorphic hardware. Here we show that focused ion beam irradiation in VO$_{2}$- and V$_{2}$O$_{3}$-based resistive-switching oscillators induces a transition from regular periodic oscillations to strongly irregular stochastic firing, while simultaneously reducing the required switching energy by orders of magnitude. Under an applied electric field, these materials undergo a volatile insulator-to-metal transition characterized by the formation of percolating metallic filaments within an insulating bulk. Using numerical simulations based on the Mott resistor network, we demonstrate that defect-induced modifications to filament nucleation and stability drive these devices into stochastic oscillatory regimes. These results are validated by experimental measurements on irradiated VO$_{2}$ and V$_{2}$O$_{3}$ devices. |
| title | Disorder-driven stochastic dynamics in Mott resistive-switching systems |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2602.14173 |