Saved in:
Bibliographic Details
Main Authors: Cao, Yuhong, Hu, Zekun, Lynch, Jason, Choi, Bongjun, Yang, Kyung Min, Cho, Hyunmin, Leblanc, Chloe, Chen, Chen, Redwing, Joan M., Jariwala, Deep
Format: Preprint
Published: 2026
Subjects:
Online Access:https://arxiv.org/abs/2602.14230
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866915799679107072
author Cao, Yuhong
Hu, Zekun
Lynch, Jason
Choi, Bongjun
Yang, Kyung Min
Cho, Hyunmin
Leblanc, Chloe
Chen, Chen
Redwing, Joan M.
Jariwala, Deep
author_facet Cao, Yuhong
Hu, Zekun
Lynch, Jason
Choi, Bongjun
Yang, Kyung Min
Cho, Hyunmin
Leblanc, Chloe
Chen, Chen
Redwing, Joan M.
Jariwala, Deep
contents The manipulation of optical properties, including reflection, refraction, polarization, phase, and frequency, has long been central to advancing photonic and optoelectronic technologies. However, existing electro-optical approaches rely on volatile mechanisms that require continuous power consumption. Here, we demonstrate strong, nonvolatile modulation of optical dispersion in monolayer tungsten disulfide (ML WS2) using patterned ferroelectric domains in aluminum scandium nitride (AlScN). By locally poling ferroelectric domains into opposite states, we achieve substantial manipulation of the complex refractive index (Delta n > 0.7, Delta k > 0.4) and excitonic energy shifts (~50 meV) in ML WS2, comparable to previous gate-tuning approaches while eliminating continuous power consumption. We introduce an asymmetric screening model that reveals how ferroelectric polarization induces carrier-density-dependent Coulomb screening, leading to distinct excitonic behaviors between electron- and hole-doped regions. Furthermore, we demonstrate a gate-free lateral p-n homojunction with a rectification ratio of 6e10^3, formed through spatial carrier redistribution. These findings establish ferroelectric/2D heterostructures as a powerful platform for nonvolatile optical dispersion engineering, enabling energy-efficient, reconfigurable photonic and optoelectronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2602_14230
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Controlled non-volatile modulation of optical dispersion in monolayer tungsten disulfide via ferroelectric polarization patterning
Cao, Yuhong
Hu, Zekun
Lynch, Jason
Choi, Bongjun
Yang, Kyung Min
Cho, Hyunmin
Leblanc, Chloe
Chen, Chen
Redwing, Joan M.
Jariwala, Deep
Optics
The manipulation of optical properties, including reflection, refraction, polarization, phase, and frequency, has long been central to advancing photonic and optoelectronic technologies. However, existing electro-optical approaches rely on volatile mechanisms that require continuous power consumption. Here, we demonstrate strong, nonvolatile modulation of optical dispersion in monolayer tungsten disulfide (ML WS2) using patterned ferroelectric domains in aluminum scandium nitride (AlScN). By locally poling ferroelectric domains into opposite states, we achieve substantial manipulation of the complex refractive index (Delta n > 0.7, Delta k > 0.4) and excitonic energy shifts (~50 meV) in ML WS2, comparable to previous gate-tuning approaches while eliminating continuous power consumption. We introduce an asymmetric screening model that reveals how ferroelectric polarization induces carrier-density-dependent Coulomb screening, leading to distinct excitonic behaviors between electron- and hole-doped regions. Furthermore, we demonstrate a gate-free lateral p-n homojunction with a rectification ratio of 6e10^3, formed through spatial carrier redistribution. These findings establish ferroelectric/2D heterostructures as a powerful platform for nonvolatile optical dispersion engineering, enabling energy-efficient, reconfigurable photonic and optoelectronic devices.
title Controlled non-volatile modulation of optical dispersion in monolayer tungsten disulfide via ferroelectric polarization patterning
topic Optics
url https://arxiv.org/abs/2602.14230