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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2602.15002 |
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| _version_ | 1866912907975983104 |
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| author | Zhou, Yongjian Cui, Haoran Ye, Zefang Lin, Jung-Fu Wang, Yan Wang, Yaguo |
| author_facet | Zhou, Yongjian Cui, Haoran Ye, Zefang Lin, Jung-Fu Wang, Yan Wang, Yaguo |
| contents | Cross-plane heat transport is a critical bottleneck for van der Waals (vdW) electronics, yet its microscopic governing principles remain elusive. We demonstrate that stacking order is an effective control knob for cross-plane phonon transport in multilayer Rhenium Disulfide (ReS2). Thickness-dependent thermal conductivity measurements reveal remarkably long cross-plane phonon mean free paths (MFPs) (>= 200-300 nm) and provide a direct experimental observation of the transition from quasi-ballistic transport to a thickness-independent ballistic limit. AA stacking exhibits nearly double the cross-plane thermal conductivity of AB stacking, driven by longer acoustic phonon lifetimes from a more "coherent" interlayer registry. Integrated deep neural-network molecular dynamics reveals that phonon filtering in ReS2 is fundamentally frequency-selective: weak vdW coupling acts as a low-pass filter, whereas stronger coupling broadens the transmission passband. These results establish ReS2 as a model system where stacking order and interlayer coupling can be engineered to tune heat conduction across diffusive, quasi-ballistic, and ballistic regimes, offering a new framework for thermal management in 2D electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_15002 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Stacking-Engineered Thermal Transport and Phonon Filtering in Rhenium Disulfide Zhou, Yongjian Cui, Haoran Ye, Zefang Lin, Jung-Fu Wang, Yan Wang, Yaguo Materials Science Cross-plane heat transport is a critical bottleneck for van der Waals (vdW) electronics, yet its microscopic governing principles remain elusive. We demonstrate that stacking order is an effective control knob for cross-plane phonon transport in multilayer Rhenium Disulfide (ReS2). Thickness-dependent thermal conductivity measurements reveal remarkably long cross-plane phonon mean free paths (MFPs) (>= 200-300 nm) and provide a direct experimental observation of the transition from quasi-ballistic transport to a thickness-independent ballistic limit. AA stacking exhibits nearly double the cross-plane thermal conductivity of AB stacking, driven by longer acoustic phonon lifetimes from a more "coherent" interlayer registry. Integrated deep neural-network molecular dynamics reveals that phonon filtering in ReS2 is fundamentally frequency-selective: weak vdW coupling acts as a low-pass filter, whereas stronger coupling broadens the transmission passband. These results establish ReS2 as a model system where stacking order and interlayer coupling can be engineered to tune heat conduction across diffusive, quasi-ballistic, and ballistic regimes, offering a new framework for thermal management in 2D electronics. |
| title | Stacking-Engineered Thermal Transport and Phonon Filtering in Rhenium Disulfide |
| topic | Materials Science |
| url | https://arxiv.org/abs/2602.15002 |