Piezoelectric MEMS Phase Modulator for Silicon Nitride Platform in the Visible Spectrum
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arXiv
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| Autores principales: | , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866908839904804864 |
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| author | Dullo, Firehun T. Thrane, Paul C. Jayakumar, Nikhil Skokic, Zeljko Dirdal, Christopher A. Gjessing, Jo Ahluwalia, Balpreet S. |
| author_facet | Dullo, Firehun T. Thrane, Paul C. Jayakumar, Nikhil Skokic, Zeljko Dirdal, Christopher A. Gjessing, Jo Ahluwalia, Balpreet S. |
| contents | Active photonic integrated circuits (PICs) in the visible spectrum are essential for on-chip applications, requiring low-loss waveguides with broad transparency and efficient, low-power phase modulation. Here, we demonstrate a compact, ultra-low-power phase modulator based on a silicon nitride (Si$_3$N$_4$) waveguide integrated with thin-film lead zirconate titanate (PZT) that actuates a bridge-type MEMS. The suspended actuator exploits PZT's strong piezoelectric effect to induce mechanically driven phase shifts, enabling efficient modulation in a Mach--Zehnder interferometer. For 3~mm and 5~mm modulators, phase shifts of $1.45π$ and $2.5π$ are achieved at 10~V, corresponding to a scalability metric ($V_π\cdot L$) of 2.25~V$\cdot$cm at 635~nm. This represents an order-of-magnitude improvement in scalability over stress-optic PZT modulators. The devices also exhibit ultralow power consumption ($\sim 12\,\mathrm{nW}$), $\sim 5\,\mathrm{ms}$ rise time, and optical loss $< 0.75\,\mathrm{dB/cm}$. Furthermore, we demonstrate on-chip beam shaping. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_16577 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Piezoelectric MEMS Phase Modulator for Silicon Nitride Platform in the Visible Spectrum Dullo, Firehun T. Thrane, Paul C. Jayakumar, Nikhil Skokic, Zeljko Dirdal, Christopher A. Gjessing, Jo Ahluwalia, Balpreet S. Optics Applied Physics Active photonic integrated circuits (PICs) in the visible spectrum are essential for on-chip applications, requiring low-loss waveguides with broad transparency and efficient, low-power phase modulation. Here, we demonstrate a compact, ultra-low-power phase modulator based on a silicon nitride (Si$_3$N$_4$) waveguide integrated with thin-film lead zirconate titanate (PZT) that actuates a bridge-type MEMS. The suspended actuator exploits PZT's strong piezoelectric effect to induce mechanically driven phase shifts, enabling efficient modulation in a Mach--Zehnder interferometer. For 3~mm and 5~mm modulators, phase shifts of $1.45π$ and $2.5π$ are achieved at 10~V, corresponding to a scalability metric ($V_π\cdot L$) of 2.25~V$\cdot$cm at 635~nm. This represents an order-of-magnitude improvement in scalability over stress-optic PZT modulators. The devices also exhibit ultralow power consumption ($\sim 12\,\mathrm{nW}$), $\sim 5\,\mathrm{ms}$ rise time, and optical loss $< 0.75\,\mathrm{dB/cm}$. Furthermore, we demonstrate on-chip beam shaping. |
| title | Piezoelectric MEMS Phase Modulator for Silicon Nitride Platform in the Visible Spectrum |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2602.16577 |