Atomically Precise Electron Beam Sculpting of Bilayer h-BN: The Role of Crystallographic Orientation and Milling Strategy
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866917281292877824 |
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| author | Dyck, Ondrej Lupini, Andrew R. Vlassiouk, Ivan Brahlek, Matthew Moore, Rob Jesse, Stephen |
| author_facet | Dyck, Ondrej Lupini, Andrew R. Vlassiouk, Ivan Brahlek, Matthew Moore, Rob Jesse, Stephen |
| contents | Achieving atomic precision in top-down manufacturing remains a fundamental challenge nanofabrication technology. Here, the focused electron beam of a scanning transmission electron microscope is used to demonstrate atomically precise sculpting of hexagonal boron nitride (h-BN) bilayers, achieving nanoribbons as narrow as 6 Å with atomically smooth edges. The key to this precision lies in understanding how the underlying atomic structure, particularly in twisted bilayer systems, influences the milling process. High-angle annular dark-field imaging combined with multislice simulations reveals distinct intensity signatures that allow identification of different stacking arrangements within moiré patterns. Mathematical analysis of moiré lattices provides a predictive framework for determining optimal cutting directions, with cuts along armchair directions yielding superior edge quality compared to zigzag orientations. Surprisingly, a sequential milling approach, where a small electron beam subscan area is translated during the process, produces significantly better results than parallel milling of the entire target region. To understand these differences we implemented a stochastic milling model that reveals that sequential milling minimizes unwanted exposure to surrounding material through beam tail effects. These findings establish a framework for achieving atomic precision in electron beam sculpting of two-dimensional materials and provide fundamental insights applicable to the broader challenge of top-down nanofabrication. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_16886 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Atomically Precise Electron Beam Sculpting of Bilayer h-BN: The Role of Crystallographic Orientation and Milling Strategy Dyck, Ondrej Lupini, Andrew R. Vlassiouk, Ivan Brahlek, Matthew Moore, Rob Jesse, Stephen Materials Science Achieving atomic precision in top-down manufacturing remains a fundamental challenge nanofabrication technology. Here, the focused electron beam of a scanning transmission electron microscope is used to demonstrate atomically precise sculpting of hexagonal boron nitride (h-BN) bilayers, achieving nanoribbons as narrow as 6 Å with atomically smooth edges. The key to this precision lies in understanding how the underlying atomic structure, particularly in twisted bilayer systems, influences the milling process. High-angle annular dark-field imaging combined with multislice simulations reveals distinct intensity signatures that allow identification of different stacking arrangements within moiré patterns. Mathematical analysis of moiré lattices provides a predictive framework for determining optimal cutting directions, with cuts along armchair directions yielding superior edge quality compared to zigzag orientations. Surprisingly, a sequential milling approach, where a small electron beam subscan area is translated during the process, produces significantly better results than parallel milling of the entire target region. To understand these differences we implemented a stochastic milling model that reveals that sequential milling minimizes unwanted exposure to surrounding material through beam tail effects. These findings establish a framework for achieving atomic precision in electron beam sculpting of two-dimensional materials and provide fundamental insights applicable to the broader challenge of top-down nanofabrication. |
| title | Atomically Precise Electron Beam Sculpting of Bilayer h-BN: The Role of Crystallographic Orientation and Milling Strategy |
| topic | Materials Science |
| url | https://arxiv.org/abs/2602.16886 |