Phonon-enhanced strain sensitivity of quantum dots in two-dimensional semiconductors
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866908840647196672 |
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| author | Shit, Sumitra Waheed, Yunus Surendran, Jithin Thoppil Prasad, Indrajeet Dhananjay Watanabe, Kenji Taniguchi, Takashi Kumar, Santosh |
| author_facet | Shit, Sumitra Waheed, Yunus Surendran, Jithin Thoppil Prasad, Indrajeet Dhananjay Watanabe, Kenji Taniguchi, Takashi Kumar, Santosh |
| contents | Two-dimensional semiconductors have attracted considerable interest for integration into emerging quantum photonic networks. Strain engineering of monolayer transition-metal dichalcogenides (ML-TMDs) enables the tuning of light-matter interactions and associated optoelectronic properties, and generates new functionalities, including the formation of quantum dots (QDs). Here, we combine spatially resolved micro-photoluminescence ($μ$-PL) spectroscopy from cryogenic (4$\text{-}$94 K) to room temperature with micro-Raman spectroscopy at room temperature to investigate the strain-dependent emission energies of thousands of individual QDs in ML-WS$_2$ and ML-WSe$_2$, integrated across multiple heterostructures and a piezoelectric device. Compared with delocalized excitons, QDs in both materials exhibit enhanced strain sensitivities of their emission energies $-$ approximately fourfold in WS$_2$ and twofold in WSe$_2$ $-$ leading to pronounced broadening of the ensemble emission linewidth. Temperature-dependent $μ$-PL spectroscopy combined with dynamic strain tuning experiments further reveal that the enhanced strain sensitivity of individual QDs originates from strengthened interactions with low-energy phonons induced by quantum confinement. Our results demonstrate a versatile strain-engineering approach with potential for spectral matching across solid-state, atomic, and hybrid quantum photonic networks, and provide new insights into phonon-QD interactions in two-dimensional semiconductors. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2602_17212 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Phonon-enhanced strain sensitivity of quantum dots in two-dimensional semiconductors Shit, Sumitra Waheed, Yunus Surendran, Jithin Thoppil Prasad, Indrajeet Dhananjay Watanabe, Kenji Taniguchi, Takashi Kumar, Santosh Quantum Physics Mesoscale and Nanoscale Physics Optics Two-dimensional semiconductors have attracted considerable interest for integration into emerging quantum photonic networks. Strain engineering of monolayer transition-metal dichalcogenides (ML-TMDs) enables the tuning of light-matter interactions and associated optoelectronic properties, and generates new functionalities, including the formation of quantum dots (QDs). Here, we combine spatially resolved micro-photoluminescence ($μ$-PL) spectroscopy from cryogenic (4$\text{-}$94 K) to room temperature with micro-Raman spectroscopy at room temperature to investigate the strain-dependent emission energies of thousands of individual QDs in ML-WS$_2$ and ML-WSe$_2$, integrated across multiple heterostructures and a piezoelectric device. Compared with delocalized excitons, QDs in both materials exhibit enhanced strain sensitivities of their emission energies $-$ approximately fourfold in WS$_2$ and twofold in WSe$_2$ $-$ leading to pronounced broadening of the ensemble emission linewidth. Temperature-dependent $μ$-PL spectroscopy combined with dynamic strain tuning experiments further reveal that the enhanced strain sensitivity of individual QDs originates from strengthened interactions with low-energy phonons induced by quantum confinement. Our results demonstrate a versatile strain-engineering approach with potential for spectral matching across solid-state, atomic, and hybrid quantum photonic networks, and provide new insights into phonon-QD interactions in two-dimensional semiconductors. |
| title | Phonon-enhanced strain sensitivity of quantum dots in two-dimensional semiconductors |
| topic | Quantum Physics Mesoscale and Nanoscale Physics Optics |
| url | https://arxiv.org/abs/2602.17212 |