Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits
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arXiv
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2026
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| author | Wan, Hsien-Wen Cheng, Yi-Ting Cheng, Chao-Kai Chia, Jui-Min Wu, Chien-Ting Yeh, Sheng-Shiuan Hsu, Chia-Hung Kwo, Jueinai Hong, Minghwei |
| author_facet | Wan, Hsien-Wen Cheng, Yi-Ting Cheng, Chao-Kai Chia, Jui-Min Wu, Chien-Ting Yeh, Sheng-Shiuan Hsu, Chia-Hung Kwo, Jueinai Hong, Minghwei |
| contents | We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and 9.6-nm-thick films, respectively-the lowest reported for Al on any substrate and long considered unattainable for practical device platforms. Azimuthal scans across off-normal Al{$11\bar{1}$} reflections exhibit narrow full width at half maximum (FWHM) values down to $0.55^\circ$, unmatched by epi-Al grown by any other method. Normal scans showed a well-defined (111) orientation with pronounced Pendellösung fringes, and $θ$-rocking-curve FWHM values down to $0.018^\circ$; the former indicates abrupt film-substrate and oxide-film interfaces. Electron backscatter diffraction mapping confirms macroscopic in-plane uniformity and the absence of $Σ$3 twin domains. Atomic force microscopy and scanning transmission electron microscopy confirmed atomically smooth surfaces and abrupt heterointerfaces. The films exhibit critical temperatures approaching bulk values, establishing a materials platform for scalable, high-coherence superconducting qubits. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2602_17249 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits Wan, Hsien-Wen Cheng, Yi-Ting Cheng, Chao-Kai Chia, Jui-Min Wu, Chien-Ting Yeh, Sheng-Shiuan Hsu, Chia-Hung Kwo, Jueinai Hong, Minghwei Quantum Physics Materials Science Superconductivity We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and 9.6-nm-thick films, respectively-the lowest reported for Al on any substrate and long considered unattainable for practical device platforms. Azimuthal scans across off-normal Al{$11\bar{1}$} reflections exhibit narrow full width at half maximum (FWHM) values down to $0.55^\circ$, unmatched by epi-Al grown by any other method. Normal scans showed a well-defined (111) orientation with pronounced Pendellösung fringes, and $θ$-rocking-curve FWHM values down to $0.018^\circ$; the former indicates abrupt film-substrate and oxide-film interfaces. Electron backscatter diffraction mapping confirms macroscopic in-plane uniformity and the absence of $Σ$3 twin domains. Atomic force microscopy and scanning transmission electron microscopy confirmed atomically smooth surfaces and abrupt heterointerfaces. The films exhibit critical temperatures approaching bulk values, establishing a materials platform for scalable, high-coherence superconducting qubits. |
| title | Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits |
| topic | Quantum Physics Materials Science Superconductivity |
| url | https://arxiv.org/abs/2602.17249 |