Emergence of a symmetry-broken Chern insulator near a moiré Kondo breakdown
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| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866914338914172928 |
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| author | Tian, Wanghao Shen, Bowen Li, Lizhong Zhang, Mingjie Liu, Feng Li, Chushan Liu, Yaotian Xu, Fan Watanabe, Kenji Taniguchi, Takashi Li, Peiling Lu, Li Xu, Yang Jiang, Shengwei Li, Tingxin Shan, Jie Mak, Kin Fai |
| author_facet | Tian, Wanghao Shen, Bowen Li, Lizhong Zhang, Mingjie Liu, Feng Li, Chushan Liu, Yaotian Xu, Fan Watanabe, Kenji Taniguchi, Takashi Li, Peiling Lu, Li Xu, Yang Jiang, Shengwei Li, Tingxin Shan, Jie Mak, Kin Fai |
| contents | Moiré semiconductors built on angle-aligned transition metal dichalcogenide (TMD) heterobilayers provide a physical realization of the Kondo lattice model, in which one TMD layer is prepared in a Mott insulating state supporting a lattice of local magnetic moments and the other layer in a metallic state supporting itinerant carriers. The artificial Kondo lattice enables the exploration of exotic states of matter near a continuously tunable Kondo breakdown. Here we report the emergence of a symmetry-broken Chern insulator at a moiré hole filling factor 4/3 in angle-aligned MoTe2/WSe2 moiré bilayers, which realize a chiral Kondo lattice. The symmetry-broken Chern insulator, which exhibits integer quantized Hall conductance at a fractional moiré filling, breaks the translational symmetry of the lattice spontaneously; it also appears only near a magnetic field-induced Kondo breakdown in the mixed-valence regime of the material. We further demonstrate that the magnetic field required to induce the Kondo breakdown and to stabilize the symmetry-broken Chern insulator is twist angle dependent. The results present new opportunities for exploring the subtle interplay between topology and Kondo interactions in moiré semiconductors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_17349 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Emergence of a symmetry-broken Chern insulator near a moiré Kondo breakdown Tian, Wanghao Shen, Bowen Li, Lizhong Zhang, Mingjie Liu, Feng Li, Chushan Liu, Yaotian Xu, Fan Watanabe, Kenji Taniguchi, Takashi Li, Peiling Lu, Li Xu, Yang Jiang, Shengwei Li, Tingxin Shan, Jie Mak, Kin Fai Mesoscale and Nanoscale Physics Strongly Correlated Electrons Moiré semiconductors built on angle-aligned transition metal dichalcogenide (TMD) heterobilayers provide a physical realization of the Kondo lattice model, in which one TMD layer is prepared in a Mott insulating state supporting a lattice of local magnetic moments and the other layer in a metallic state supporting itinerant carriers. The artificial Kondo lattice enables the exploration of exotic states of matter near a continuously tunable Kondo breakdown. Here we report the emergence of a symmetry-broken Chern insulator at a moiré hole filling factor 4/3 in angle-aligned MoTe2/WSe2 moiré bilayers, which realize a chiral Kondo lattice. The symmetry-broken Chern insulator, which exhibits integer quantized Hall conductance at a fractional moiré filling, breaks the translational symmetry of the lattice spontaneously; it also appears only near a magnetic field-induced Kondo breakdown in the mixed-valence regime of the material. We further demonstrate that the magnetic field required to induce the Kondo breakdown and to stabilize the symmetry-broken Chern insulator is twist angle dependent. The results present new opportunities for exploring the subtle interplay between topology and Kondo interactions in moiré semiconductors. |
| title | Emergence of a symmetry-broken Chern insulator near a moiré Kondo breakdown |
| topic | Mesoscale and Nanoscale Physics Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2602.17349 |