A stochastic simulation of the dislocation-mediated etching of porous GaN distributed Bragg reflectors

Ähnliche Einträge

• A cascade model for the defect-driven etching of porous GaN distributed Bragg reflectors
  von: Thornley, Ben, et al.
  Veröffentlicht: (2025)
• Visualizing metal-mediated nucleation and growth of GaN
  von: Liu, Abby, et al.
  Veröffentlicht: (2025)
• High-reflectivity homoepitaxial distributed Bragg reflectors for photonic applications
  von: Janowska, Helena, et al.
  Veröffentlicht: (2025)
• Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing
  von: Kang, Jingxuan, et al.
  Veröffentlicht: (2025)
• Three-dimensional imaging of threading dislocations in GaN by multimodal stimulated Raman scattering microscopy
  von: Takahashi, Shun, et al.
  Veröffentlicht: (2025)