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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2602.18736 |
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| _version_ | 1866908846427996160 |
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| author | Guye, Kidus Orlandini, Davide Shin, Seungheon Allerman, Andy Agonafer, Damena Rajan, Siddharth Graham, Samuel |
| author_facet | Guye, Kidus Orlandini, Davide Shin, Seungheon Allerman, Andy Agonafer, Damena Rajan, Siddharth Graham, Samuel |
| contents | Next-generation high-power radio-frequency (RF) devices increasingly demand transistors that operate efficiently with high gain at high frequencies. High-aluminum-content ultra-wide-bandgap (UWBG) AlGaN alloys have shown great potential for enabling such high-frequency RF technologies. However, the widespread adoption of AlGaN-based RF devices is limited by thermal-management challenges arising from the intrinsically low thermal conductivity of AlGaN, which leads to higher device thermal resistance for a given geometry compared to GaN RF devices. As a result, these next-generation devices are highly susceptible to self-heating. This study investigates the thermal behavior of UWBG AlGaN devices, focusing on the effects of AlGaN channel thickness, substrate technology, and high-k material integration on reducing device thermal resistance to enable high-power operation. Experimental results demonstrate a record-low thermal resistance of 3.96 mm$\cdot$K/W when an AlN substrate is employed and the AlGaN channel thickness is reduced to 5 nm. These findings provide valuable insights into mitigating thermal limitations in UWBG devices through device-level engineering and the strategic integration of high-k materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_18736 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices Guye, Kidus Orlandini, Davide Shin, Seungheon Allerman, Andy Agonafer, Damena Rajan, Siddharth Graham, Samuel Applied Physics Next-generation high-power radio-frequency (RF) devices increasingly demand transistors that operate efficiently with high gain at high frequencies. High-aluminum-content ultra-wide-bandgap (UWBG) AlGaN alloys have shown great potential for enabling such high-frequency RF technologies. However, the widespread adoption of AlGaN-based RF devices is limited by thermal-management challenges arising from the intrinsically low thermal conductivity of AlGaN, which leads to higher device thermal resistance for a given geometry compared to GaN RF devices. As a result, these next-generation devices are highly susceptible to self-heating. This study investigates the thermal behavior of UWBG AlGaN devices, focusing on the effects of AlGaN channel thickness, substrate technology, and high-k material integration on reducing device thermal resistance to enable high-power operation. Experimental results demonstrate a record-low thermal resistance of 3.96 mm$\cdot$K/W when an AlN substrate is employed and the AlGaN channel thickness is reduced to 5 nm. These findings provide valuable insights into mitigating thermal limitations in UWBG devices through device-level engineering and the strategic integration of high-k materials. |
| title | Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2602.18736 |