Interface stability of beta-Ga2O3 (100) on oxidized Si- and C-terminated 3C-SiC (001) substrates: a first-principles investigation

Fuente: arXiv

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Bibliographic Details
Main Authors:	Licciardi, Marica, Ugolotti, Aldo, Scalise, Emilio, Miglio, Leo
Format:	Preprint
Published:	2026
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2602.19820