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Interface stability of beta-Ga2O3 (100) on oxidized Si- and C-terminated 3C-SiC (001) substrates: a first-principles investigation

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Licciardi, Marica, Ugolotti, Aldo, Scalise, Emilio, Miglio, Leo
Formato:	Preprint
Publicado:	2026
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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